Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G01-3 General Description 2 BR24G01-3 is a serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C BUS. Not Recommended for All controls available by 2 ports of serial clock New Designs (SCL) and serial data (SDA) Other devices than EEPROM can be connected to DIP-T8 TSSOP-B8 the same port, saving microcontroller port 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400kHz operation Page Write Mode useful for initial value write at SOP8 TSSOP-B8J factory shipment 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm Self-timed Programming Cycle Low Current Consumption Prevention of Write Mistake Write (Write Protect) Function added Prevention of Write Mistake At Low Voltage More than 1 million write cycles More than 40 years data retention SOP- J8 MSOP8 Noise filter built in SCL / SDA terminal 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm Initial delivery state FFh SSOP-B8 VSON008X2030 3.00mm x 6.40mm x 1.35mm 2.00mm x 3.00mm x 0.60mm Figure 1. BR24G01-3 Power Source Capacity Bit Format Type Package Voltage *1 BR24G01-3 DIP-T8 BR24G01F-3 SOP8 BR24G01FJ-3 SOP-J8 BR24G01FV-3 SSOP-B8 1Kbit 1288 1.6V to 5.5V BR24G01FVT-3 TSSOP-B8 BR24G01FVJ-3 TSSOP-B8J BR24G01FVM-3 MSOP8 BR24G01NUX-3 VSON008X2030 *1 Not Recommended for New Designs. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100160-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/33 TSZ22111 14 001 11.Jun.2019 Rev.004 Datasheet BR24G01-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V 450 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 450 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 300 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C 330 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C Power Dissipation Pd mW 310 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 310 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 300 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (1) 800 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / - -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of Input Output Voltage Voltage/Output Voltage is not lower than -0.8V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) (1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (2) 1,000,000 - - Times Write Cycles (2) Data Retention 40 - - Years (2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage VCC 1.6 to 5.5 V Input Voltage VIN 0 to Vcc DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 VIH1 0.7VCC - Vcc+1.0 V 1.7VVcc5.5V (3) Input Low Voltage1 V -0.3 - +0.3V V 1.7VV 5.5V IL1 cc cc Input High Voltage2 VIH2 0.8Vcc - Vcc+1.0 V 1.6VVcc<1.7V (3) Input Low Voltage2 V -0.3 - +0.2V V 1.6VV <1.7V IL2 cc cc Output Low Voltage1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVcc5.5V (SDA) Output Low Voltage2 V - - 0.2 V I =0.7mA, 1.6VV <2.5V (SDA) OL2 OL cc Input Leakage Current I -1 - +1 A V =0 to V LI IN cc Output Leakage Current ILO -1 - +1 A VOUT=0 to Vcc (SDA) V =5.5V, f =400kHz, t =5ms, cc SCL WR Supply Current (Write) I - - 2.0 mA CC1 Byte write, Page write V =5.5V, f =400kHz cc SCL Supply Current (Read) I - - 0.5 mA CC2 Random read, current read, sequential read Vcc=5.5V, SDA, SCL=Vcc Standby Current ISB - - 2.0 A A0,A1,A2=GND,WP=GND (3) When the pulse width is 50ns or less, it is -0.8V. www.rohm.com TSZ02201-0R2R0G100160-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/33 TSZ22111 15 001 11.Jun.2019 Rev.004