Datasheet Serial EEPROM series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G02-3A General Description 2 BR24G02-3A is a serial EEPROM of I C BUS interface method Packages W(Typ.) x D(Typ.)x H(Max.) Features All controls available by 2 ports of serial clock(SCL) and serial data(SDA) Other devices than EEPROM can be connected to the Not Recommended for same port, saving microcontroller port New Designs 1.6V to 5.5V single power source action most suitable for battery use DIP-T8 TSSOP-B8J 1MHz action is possible (1.7V to 5.5V) 3.00mm x 4.90mm x 1.10mm 9.30mm x 6.50mm x 7.10mm Up to 8 bytes in page write mode Self-timed programming cycle Low current consumption Prevention of write mistake Write (write protect) function added Prevention of write mistake at low voltage MSOP8 SOP8 More than 1 million write cycles 2.90mm x 4.00mm x 0.90mm 5.00mm x 6.20mm x 1.71mm More than 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh VSON008X2030 SOP-J8 2.00mm x 3.00mm x 0.60mm 4.90mm x 6.00mm x 1.65mm TSSOP-B8 3.00mm x 6.40mm x 1.20mm Figure 1. BR24G02-3A Power Source Capacity Bit Format Type Package Voltage *1 BR24G02-3A DIP-T8 BR24G02F-3A SOP8 BR24G02FJ-3A SOP-J8 2Kbit 2568 BR24G02FVT-3A 1.6V to 5.5V TSSOP-B8 BR24G02FVJ-3A TSSOP-B8J BR24G02FVM-3A MSOP8 BR24G02NUX-3A VSON008X2030 *1 Not Recommended for New Designs. Product structure: Silicon monolithic integrated circuit This product is not designed protection against radioactive rays .w ww.rohm.com TSZ02201-0R2R0G100570-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/33 TSZ22111 14 001 11.Jun.2019 Rev.004 BR24G02-3A Absolute Maximum Ratings (Ta=25C) Parameter Symbol Ratings Unit Remarks Supply voltage VCC -0.3 to +6.5 V 450 (SOP8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 450 (SOP-J8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 330 (TSSOP-B8) When using at Ta=25C or higher 3.3mW to be reduced per 1C. Power Dissipation Pd 310 (TSSOP-B8J) mW When using at Ta=25C or higher 3.1mW to be reduced per 1C. 310 (MSOP8) When using at Ta=25C or higher 3.1mW to be reduced per 1C. 300 (VSON008X2030) When using at Ta=25C or higher 3.0mW to be reduced per 1C. *1 800 (DIP-T8 ) When using at Ta=25C or higher 8.0mW to be reduced per 1C. Storage Temperature Tstg -65 to +150 C Operation Temperature Topr -40 to +85 C The Max value of input voltage / output voltage is not over 6.5V. Input Voltage / - -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of input voltage Output Voltage / output voltage is not under -0.8V. Junction Temperature Tjmax 150 C Junction temperature at the storage condition Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) *1 Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limits Parameter Unit Min. Typ. Max *2 Write cycles 1,000,000 - - Times *2 Data retention 40 - - Years *2 Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Supply voltage Vcc 1.6 to 5.5 V Input voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40 to +85C, Vcc =1.6 to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V 1.7VVcc5.5V *3 Input Low Voltage1 VIL1 -0.3 - 0.3Vcc V 1.7VVcc5.5V Input High Voltage2 VIH2 0.8Vcc - Vcc+1.0 V 1.6VVcc<1.7V *3 Input Low Voltage2 VIL2 -0.3 - 0.2Vcc V 1.6VVcc<1.7V Output Low Voltage1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVcc5.5V (SDA) Output Low Voltage2 VOL2 - - 0.2 V IOL=0.7mA, 1.6VVcc<2.5V (SDA) Input Leakage Current ILI -1 - 1 A VIN=0 to Vcc Output Leakage Current ILO -1 - 1 A VOUT=0 to Vcc (SDA) Vcc=5.5V, fSCL=1MHz, tWR=5ms, Supply Current (Write) ICC1 - - 2.0 Byte write, Page write mA Vcc=5.5V, fSCL=1MHz Random read, current read, Supply Current (Read) ICC2 - - 2.0 sequential read Vcc=5.5V, SDA, SCL=Vcc Standby Current ISB - - 2.0 A A0, A1, A2=GND, WP=GND *3 When the pulse width is 50ns or less, it is -0.8V. www.rohm.com TSZ02201-0R2R0G100570-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/33 TSZ22111 15 001 11.Jun.2019 Rev.004