BR24G32-3 ROHM

Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G32-3 General Description 2 BR24G32-3 is a 32Kbit serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C Not Recommended for BUS. All controls available by 2 ports of serial clock New Designs (SCL) and serial data (SDA) Other devices than EEPROM can be connected to DIP-T8 TSSOP-B8 the same port, saving microcontroller port 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400kHz operation Up to 32 Byte in Page Write Mode Bit Format 4K x 8 SOP8 Self-timed Programming Cycle TSSOP-B8J 5 .00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm Low Current Consumption Prevention of Write Mistake WP (Write Protect) Function added Prevention of Write Mistake at Low Voltage 1 million write cycles 40 years data retention SOP- J8M MSOP8 Noise filter built in SCL / SDA terminal 4.90mm x 6.00mm x 1.80mm 2.90mm x 4.00mm x 0.90mm Initial delivery state FFh SOP- J8 VSON008X2030 4.90mm x 6.00mm x 1.65mm 2.00mm x 3.00mm x 0.60mm SSOP-B8 3.00mm x 6.40mm x 1.35mm Figure 1. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100210-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/35 TSZ22111 14 001 11.Jun.2019 Rev.010 Datasheet BR24G32-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V 0.45 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8M) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 0.30 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C Power Dissipation Pd 0.33 (TSSOP-B8) W Derate by 3.3mW/C when operating above Ta=25C 0.31 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 0.31 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 0.30 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (1) Derate by 8.0mW/C when operating above Ta=25C 0.80 (DIP-T8 ) Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / - -0.3 to V +1.0 V When the pulse width is 50ns or less, the Min value of Input CC Output Voltage Voltage/Output Voltage is -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) (1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, VCC=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (2) Write Cycles 1,000,000 - - Times (2) Data Retention 40 - - Years (2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage VCC 1.6 to 5.5 V Input Voltage V 0 to V IN CC DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, VCC=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 VIH1 0.7VCC - VCC+1.0 V 1.7VVCC5.5V (3) Input Low Voltage1 V -0.3 - +0.3V V 1.7VV 5.5V IL1 CC CC Input High Voltage2 VIH2 0.8VCC - VCC+1.0 V 1.6VVCC<1.7V (3) Input Low Voltage2 VIL2 -0.3 - +0.2VCC V 1.6VVCC<1.7V Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VV 5.5V (SDA) OL1 OL CC Output Low Voltage2 VOL2 - - 0.2 V IOL=0.7mA, 1.6VVCC<2.5V (SDA) Input Leakage Current I -1 - +1 A V =0 to V LI IN CC Output Leakage Current ILO -1 - +1 A VOUT=0 to VCC (SDA) VCC=5.5V, fSCL=400kHz, tWR=5ms, Supply Current (Write) ICC1 - - 2.0 mA Byte write, Page write V =5.5V, f =400kHz CC SCL Supply Current (Read) I - - 0.5 mA CC2 Random read, current read, sequential read V =5.5V, SDA, SCL=V CC CC Standby Current I - - 2.0 A SB A0,A1,A2=GND,WP=GND (3) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100210-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/35 TSZ22111 15 001 11.Jun.2019 Rev.010