X-On Electronics has gained recognition as a prominent supplier of BR24G32FVJ-3AGTE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24G32FVJ-3AGTE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR24G32FVJ-3AGTE2 ROHM

BR24G32FVJ-3AGTE2 electronic component of ROHM
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Part No.BR24G32FVJ-3AGTE2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM I2C BUS 32K 4096 8bit EEPROM
Datasheet: BR24G32FVJ-3AGTE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.2801
10000 : USD 0.2801
25000 : USD 0.2696
50000 : USD 0.2657
100000 : USD 0.2592
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the BR24G32FVJ-3AGTE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24G32FVJ-3AGTE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G32-3A General Description 2 BR24G32-3A is a 32Kbit serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ) x H(Max) All controls available by 2 ports of serial clock(SCL) and serial data(SDA) Not Recommended for Other devices than EEPROM can be connected to the New Designs same port, saving microcontroller port 1.6V to 5.5V Single Power Source Operation most suitable for battery use DIP-T8 TSSOP-B8 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm 1MHz action is possible(1.7V to 5.5V) Up to 32 Byte in Page Write Mode Bit format 4K x 8bit Self-timed Programming Cycle Low Current Consumption Prevention of Write Mistake SOP8 TSSOP-B8J WP (Write Protect) Function added 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm Prevention of Write Mistake at Low Voltage 1 million write cycles 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh SOP-J8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm SSOP-B8 VSON008X2030 3.00mm x 6.40mm x 1.35mm 2.00mm x 3.00mm x 0.60mm Figure 1. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100050-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/34 TSZ22111 14 001 11.Jun.2019 Rev.010 BR24G32-3A Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage V -0.3 to +6.5 V CC 0.45 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 0.30 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C 0.33 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C Permissible Pd W Dissipation 0.31 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 0.31 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 0.30 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (Note1) Derate by 8.0mW/C when operating above Ta=25C 0.80 (DIP-T8 ) Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / - -0.3 to V +1.0 V When the pulse width is 50ns or less, the Min value of Input CC Output Voltage Voltage/Output Voltage is -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage V -4000 to +4000 V ESD (human body model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (Note1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, V =1.6V to 5.5V) CC Limit Parameter Unit Min Typ Max (Note2) Write Cycles 1,000,000 - - Times (Note2) Data Retention 40 - - Years (Note2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage VCC 1.6 to 5.5 V Input Voltage V 0 to V IN CC DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, V =1.6V to 5.5V) CC Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage 1 V 0.7V - V +1.0 V 1.7VV 5.5V IH1 CC CC CC (Note3) Input Low Voltage 1 V -0.3 - +0.3V V 1.7VV 5.5V IL1 CC CC Input High Voltage 2 V 0.8V - V +1.0 V 1.6VV <1.7V IH2 CC CC CC (Note3) Input Low Voltage 2 V -0.3 - +0.2V V 1.6VV <1.7V IL2 CC CC Output Low Voltage 1 V - - 0.4 V I =3.0mA, 2.5VV 5.5V (SDA) OL1 OL CC Output Low Voltage 2 V - - 0.2 V I =0.7mA, 1.6VV <2.5V (SDA) OL2 OL CC Input Leakage Current I -1 - +1 A V =0 to V LI IN CC Output Leakage Current I -1 - +1 A V =0 to V (SDA) LO OUT CC V =5.5V,f =1MHz, t =5ms, CC SCL WR Supply Current (Write) I - - 2.0 CC1 Byte write, Page write mA V =5.5V,f =1MHz CC SCL Random read, current read, Supply Current (Read) I - - 2.0 CC2 sequential read V =5.5V, SDA, SCL=V CC CC Standby Current I - - 2.0 A SB A0, A1, A2=GND,WP=GND (Note3) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100050-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/34 TSZ22111 15 001 11.Jun.2019 Rev.010

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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