Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G64-3 General Description 2 BR24G64-3 is a 64Kbit serial EEPROM of I C BUS interface method Features Packages W(Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C Not Recommended for BUS. All controls available by 2 ports of serial clock New Designs (SCL) and serial data (SDA) Other devices than EEPROM can be connected to DIP-T8 TSSOP-B8 the same port, saving microcontroller port 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400KHz operation Up to 32 Byte in Page Write Mode Bit Format 8K x 8 SOP8 Self-timed Programming Cycle TSSOP-B8J 5 .00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm Low Current Consumption Prevention of Write Mistake WP (Write Protect) Function added Prevention of Write Mistake at Low Voltage 1 million write cycles 40 years data retention SOP- J8 MSOP8 Noise filter built in SCL / SDA terminal 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm Initial delivery state FFh VSON008X2030 SSOP-B8 2.00mm x 3.00mm x 0.60mm 3.00mm x 6.40mm x 1.35mm Figure 1. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100220-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/34 TSZ22111 14 001 11.Jun.2019 Rev.008 Datasheet BR24G64-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V 0.45 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 0.30 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C 0.33 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C Power Dissipation Pd W 0.31 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 0.31 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 0.30 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (1) 0.80 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less, the Min value of Input - -0.3 to Vcc+1.0 V Output Voltage Voltage/Output Voltage is -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) (1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (2) Write Cycles 1,000,000 - - Times (2) 40 - - Years Data Retention (2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage Vcc 1.6 to 5.5 V Input Voltage VIN 0 to Vcc DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 V 0.7Vcc - Vcc+1.0 V 1.7VVcc5.5V IH1 (3) Input Low Voltage1 VIL1 -0.3 - +0.3Vcc V 1.7VVcc5.5V Input High Voltage2 V 0.8Vcc - Vcc+1.0 V 1.6VVcc<1.7V IH2 (3) Input Low Voltage2 VIL2 -0.3 - +0.2Vcc V 1.6VVcc<1.7V Output Low Voltage1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVcc5.5V (SDA) Output Low Voltage2 V - - 0.2 V I =0.7mA, 1.6VVcc<2.5V (SDA) OL2 OL Input Leakage Current ILI -1 - +1 A VIN=0 to Vcc Output Leakage Current I -1 - +1 A V =0 to Vcc (SDA) LO OUT Vcc=5.5V, f =400kHz, t =5ms, SCL WR Supply Current (Write) I - - 2.0 mA CC1 Byte write, Page write Vcc=5.5V, fSCL=400kHz Supply Current (Read) ICC2 - - 0.5 mA Random read, current read, sequential read Vcc=5.5V, SDA, SCL=Vcc Standby Current ISB - - 2.0 A A0,A1,A2=GND,WP=GND (3) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100220-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/34 TSZ22111 15 001 11.Jun.2019 Rev.008