X-On Electronics has gained recognition as a prominent supplier of BR24G32FVM-3GTTR EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24G32FVM-3GTTR EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR24G32FVM-3GTTR ROHM

BR24G32FVM-3GTTR electronic component of ROHM
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See Product Specifications
Part No.BR24G32FVM-3GTTR
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM I2C BUS 32K 4096 8bit EEPROM
Datasheet: BR24G32FVM-3GTTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.462 ea
Line Total: USD 0.46 
Availability - 2341
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2341
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.462
10 : USD 0.3784
100 : USD 0.3443
500 : USD 0.3322
1000 : USD 0.3201
3000 : USD 0.2717
9000 : USD 0.2585
24000 : USD 0.2519
45000 : USD 0.2497

2856
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 203
Multiples : 1
203 : USD 0.5243
250 : USD 0.5034
500 : USD 0.4851
1000 : USD 0.4693
2500 : USD 0.4554

582
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 124
Multiples : 1
124 : USD 0.3282
200 : USD 0.3267

   
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We are delighted to provide the BR24G32FVM-3GTTR from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24G32FVM-3GTTR and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G32-3 General Description 2 BR24G32-3 is a 32Kbit serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C Not Recommended for BUS. All controls available by 2 ports of serial clock New Designs (SCL) and serial data (SDA) Other devices than EEPROM can be connected to DIP-T8 TSSOP-B8 the same port, saving microcontroller port 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400kHz operation Up to 32 Byte in Page Write Mode Bit Format 4K x 8 SOP8 Self-timed Programming Cycle TSSOP-B8J 5 .00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm Low Current Consumption Prevention of Write Mistake WP (Write Protect) Function added Prevention of Write Mistake at Low Voltage 1 million write cycles 40 years data retention SOP- J8M MSOP8 Noise filter built in SCL / SDA terminal 4.90mm x 6.00mm x 1.80mm 2.90mm x 4.00mm x 0.90mm Initial delivery state FFh SOP- J8 VSON008X2030 4.90mm x 6.00mm x 1.65mm 2.00mm x 3.00mm x 0.60mm SSOP-B8 3.00mm x 6.40mm x 1.35mm Figure 1. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100210-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/35 TSZ22111 14 001 11.Jun.2019 Rev.010 Datasheet BR24G32-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V 0.45 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8M) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 0.30 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C Power Dissipation Pd 0.33 (TSSOP-B8) W Derate by 3.3mW/C when operating above Ta=25C 0.31 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 0.31 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 0.30 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (1) Derate by 8.0mW/C when operating above Ta=25C 0.80 (DIP-T8 ) Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / - -0.3 to V +1.0 V When the pulse width is 50ns or less, the Min value of Input CC Output Voltage Voltage/Output Voltage is -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) (1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, VCC=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (2) Write Cycles 1,000,000 - - Times (2) Data Retention 40 - - Years (2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage VCC 1.6 to 5.5 V Input Voltage V 0 to V IN CC DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, VCC=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 VIH1 0.7VCC - VCC+1.0 V 1.7VVCC5.5V (3) Input Low Voltage1 V -0.3 - +0.3V V 1.7VV 5.5V IL1 CC CC Input High Voltage2 VIH2 0.8VCC - VCC+1.0 V 1.6VVCC<1.7V (3) Input Low Voltage2 VIL2 -0.3 - +0.2VCC V 1.6VVCC<1.7V Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VV 5.5V (SDA) OL1 OL CC Output Low Voltage2 VOL2 - - 0.2 V IOL=0.7mA, 1.6VVCC<2.5V (SDA) Input Leakage Current I -1 - +1 A V =0 to V LI IN CC Output Leakage Current ILO -1 - +1 A VOUT=0 to VCC (SDA) VCC=5.5V, fSCL=400kHz, tWR=5ms, Supply Current (Write) ICC1 - - 2.0 mA Byte write, Page write V =5.5V, f =400kHz CC SCL Supply Current (Read) I - - 0.5 mA CC2 Random read, current read, sequential read V =5.5V, SDA, SCL=V CC CC Standby Current I - - 2.0 A SB A0,A1,A2=GND,WP=GND (3) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100210-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/35 TSZ22111 15 001 11.Jun.2019 Rev.010

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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