Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24G512-3A General Description 2 BR24G512-3A is a serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max) All controls available by 2 ports of serial clock (SCL) and serial data (SDA) Not Recommended for Other devices than EEPROM can be connected to the New Designs same port, saving microcontroller port 1.7V to 5.5V single power source operation most suitable for battery use DIP-T8 SOP-J8 1.7V to 5.5V wide limit of operating voltage, possible 9.30mm x 6.50mm x 7.10mm 4.90mm x 6.00mm x 1.65mm 1MHz operation Page Write Mode useful for initial value write at factory shipment Self-timed Programming Cycle Low Current Consumption Prevention of Write Mistake SOP8 TSSOP-B8 Write (Write Protect) Function added 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm Prevention of Write Mistake at Low Voltage More than 1 million write cycles More than 40 years data retention Figure 1. Noise filter built in SCL / SDA terminal Initial delivery state FFh Page Write Number of 128 Bytes Pages Product number BR24G512-3A BR24G512-3A Bit Power Supply Capacity Type Package Format Voltage *1 BR24G512-3A DIP-T8 BR24G512F-3A SOP8 512Kbit 64K8 1.7V to 5.5V BR24G512FJ-3A SOP-J8 BR24G512FVT-3A TSSOP-B8 *1 Not Recommended for New Designs. Product structure: Silicon monolithic integrated circuit This product has no designed protection against radioactive rays .w ww.rohm.com TSZ02201-0R2R0G100360-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/30 TSZ22111 14 001 11.Jun.2019 Rev.005 BR24G512-3A Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage Vcc -0.3 to +6.5 V 0.45 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 0.45 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C Power Dissipation Pd W 0.33 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C (1) 0.80 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of Input voltage/Output voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less, the Min value of Input - -0.3 to Vcc+1.0 V Output Voltage voltage/Output voltage is not lower than -1.0V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) (1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, V =1.7V to 5.5V) CC Limit Parameter Unit Min Typ Max (2) Write Cycles 1,000,000 - - Times (2) 40 - - Years Data Retention (2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage Vcc 1.7 to 5.5 V Input Voltage VIN 0 to Vcc DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc =1.7V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V (3) Input Low Voltage1 V -0.3 - +0.3Vcc V IL1 IOL=3.0mA, Output Low Voltage1 VOL1 - - 0.4 V 2.5VVcc5.5V (SDA) I =0.7mA, OL Output Low Voltage2 VOL2 - - 0.2 V 1.7VVcc<2.5V (SDA) Input Leakage Current I -1 - +1 A V =0 to Vcc LI IN Output Leakage Current I -1 - +1 A V =0 to Vcc (SDA) LO OUT Vcc=5.5V,f =1MHz, t =5ms, SCL WR Supply Current (Write) ICC1 - - 4.5 mA Byte write, Page write Vcc=5.5V,f =1MHz SCL Supply Current (Read) I - - 2.0 mA Random read, current read, CC2 Sequential read Vcc=5.5V, SDA, SCL=Vcc Standby Current I - - 3.0 A SB A0,A1,A2=GND,WP=GND (3) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100360-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/30 TSZ22111 15 001 11.Jun.2019 Rev.005