Datasheet Serial EEPROM Series Standard EEPROM SPI BUS EEPROM BR25G1M-3 General Description BR25G1M-3 is a 1Mbit Serial EEPROM of SPI BUS Interface. Features Packages W(Typ) x D(Typ) x H(Max) High Speed Clock Action up to 10MHz (Max) Wait Function by HOLDB Terminal Part or Whole of Memory Arrays Settable as Read only Memory Area by Program 1.8V to 5.5V Single Power Source Operation Most Suitable for Battery Use. Up to 256 Bytes in Page Write Mode. SOP8 SOP- J8 For SPI Bus Interface (CPOL, CPHA) = (0, 0), (1, 1) 5.00mm x 6.20mm x 1.71mm 4.90mm x 6.00mm x 1.65mm Self-timed Programming Cycle Low Current Consumption Figure 1. At Write Action (5V) : 0.7mA (Typ) At Read Action (5V) : 2.4mA (Typ) At Standby Action (5V) : 0.1A (Typ) Address Auto Increment Function at Read Action Prevention of Write Mistake Write Prohibition at Power On Write Prohibition by Command Code (WRDI) Write Prohibition by WPB Pin Write Prohibition Block Setting by Status Registers (BP1, BP0) Prevention of Write Mistake at Low Voltage More than 100 years Data Retention. More than 1 Million Write Cycles. Bit Format 128K8 Initial Delivery Data Memory Array: FFh Status Register: WPEN, BP1, BP0 : 0 Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100690-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/29 TSZ2211114001 06.Oct.2014 Rev.002Datasheet BR25G1M-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Ratings Unit Remarks Supply Voltage V -0.3 to +6.5 V CC When using at Ta=25C or higher 4.5mW to be reduced per 1C. 0.45 (SOP8) Power Dissipation. Pd W 0.45 (SOP-J8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. Storage Temperature Tstg - 65 to +150 C Operating Temperature Topr - 40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less, the Min value of Input - 0.3 to Vcc+1.0 V Output Voltage Voltage/Output Voltage is not under -1.0V. Junction temperature at the storage condition Junction Temperature Tjmax 150 C Electrostatic discharge voltage V -4000 to +4000 V ESD (human body model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Memory Cell Characteristics (Ta=25C, Vcc=1.8V to 5.5V) Limits Parameter Unit Min Typ Max (Note1) Write Cycles 1,000,000 - - Times (Note1) Data Retention 100 - - Years (Note1) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Power Source Voltage Vcc 1.8 to 5.5 V Input Voltage V 0 to Vcc IN Input / Output Capacity (Ta=25C, frequency=5MHz) Parameter Symbol Min Max Unit Conditions (Note1) Input Capacity C 8 V =GND IN IN pF (Note1) Output Capacity C 8 V =GND OUT OUT (Note1) Not 100% TESTED. www.rohm.com TSZ02201-0R2R0G100690-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/29 TSZ2211115001 06.Oct.2014 Rev.002