Datasheet Serial EEPROM Series Standard EEPROM SP I BUS EEPROM BR25G256-3 General Description BR25G256-3 is a 256Kbit serial EEPROM of SPI BUS interface. Features Packages W(Typ) x D(Typ) x H(Max) High Speed Clock Action up to 20MHz (Max) Wait Function by HOLDB Terminal Part or Whole of Memory Arrays Settable as Read Not Recommended for only Memory Area by Program New Designs 1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use. DIP-T8 SOP- J8 UP to 64 Byte in Page Write Mode. 9.30mm x 6.50mm x 7.10mm 4.90mm x 6.00mm x 1.65mm For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1) Self-timed Programming Cycle Low Current Consumption At Write Action (5V) : 0.6mA (Typ) At Read Action (5V) : 2.0mA (Typ) At Standby Action (5V) : 0.1A (Typ) Address Auto Increment Function at Read Action SOP8 TSSOP-B8 Prevention of Write Mistake 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm Write Prohibition at Power On Write Prohibition by Command Code (WRDI) Write Prohibition by WPB Pin Figure 1. Write Prohibition Block Setting by Status Registers (BP1, BP0) Prevention of Write Mistake at Low Voltage More than 100 years Data Retention. More than 1 Million Write Cycles. Bit Format 32K8 Initial Delivery Data Memory Array: FFh Status Register: WPEN, BP1, BP0 : 0 Product structure: Silicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100640-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/31 TSZ22111 14 001 11.Jun.2019 Rev.003 Datasheet BR25G256-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Ratings Unit Remarks Supply Voltage V -0.3 to +6.5 V CC (Note1) When using at Ta=25C or higher 8.0mW to be reduced per 1C. 0.80 (DIP-T8 ) 0.45 (SOP8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. Power Dissipation Pd W When using at Ta=25C or higher 4.5mW to be reduced per 1C. 0.45 (SOP-J8) When using at Ta=25C or higher 3.3mW to be reduced per 1C. 0.33 (TSSOP-B8) Storage Temperature Tstg - 65 to +150 C Operating Temperature Topr - 40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / - - 0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of Input Output Voltage Voltage/Output Voltage is not under -1.0V. Junction temperature at the storage condition Junction temperature Tjmax 150 C Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (Note1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limits Parameter Unit Min Typ Max (Note2) Write Cycles 1,000,000 - - Times (Note2) Data Retention 100 - - Years (Note2) Not 100% TESTED Recommended Operating Ratings Ratings Parameter Symbol Unit Min Max Power Source Voltage Vcc 1.6 5.5 V Input Voltage V 0 Vcc V IN Bypass Capacitor C 0.1 - F www.rohm.com TSZ02201-0R2R0G100640-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/31 TSZ22111 15 001 11.Jun.2019 Rev.003