Datasheet Serial EEPROM Series Industrial EEPROM 125 Operation SPI BUS EEPROM BR25H010F-2LB General Description This is the product guarantees long time support in Industrial market. BR25H010F-2LB is a serial EEPROM of SPI BUS interface method. Features Package W(Typ.) x D(Typ.) x H(Max.) Long Time Support a Product for Industrial Applications. High speed clock action up to 10MHz (Max.) Wait function by HOLDB terminal. Part or whole of memory arrays settable as read only memory area by program. 2.5V to 5.5V single power source action most suitable for battery use. Page write mode useful for initial value write at factory shipment. SOP8 For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1) 5.00mm x 6.20mm x 1.71mm Self-timed programming cycle. Low Supply Current At write operation (5V) : 1.0mA (Typ.) At read operation (5V) : 1.0mA (Typ.) At standby operation (5V) : 0.1A (Typ.) Application Address auto increment function at read operation Industrial Equipment Prevention of write mistake Write prohibition at power on. Write prohibition by command code (WRDI). Write prohibition by WPB pin. Write prohibition block setting by status registers (BP1, BP0). Prevention of write mistake at low voltage. Data at shipment Memory array: FFh, status register BP1, BP0 : 0 More than 100 years data retention. More than 1 million write cycles. Page write Number of pages 16 Byte Product Number BR25H010F-2LB BR25H010F-2LB Capacity Bit format Product Number Supply Voltage Package 1Kbit 128x8 BR25H010F-2LB 2.5V to 5.5V SOP8 Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100300-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/28 27.Feb.2014 Rev.002 TSZ2211114001 DatasheetDatasheet BR25H010F-2LB (Ta=25C) Absolute maximum ratings Parameter Symbol Limits Unit Remarks Supply Voltage VCC -0.3 to +6.5 V Permissible Dissipation Pd 0.56 W When using at Ta=25 or higher 4.5mW to be reduced per 1. Storage Temperature Range Tstg -65+150 C Operating Temperature Range Topr -40 to +125 C Terminal Voltage -0.3 to VCC+0.3 V Memory cell characteristics (VCC=2.5V to 5.5V) Limits Parameter Unit Condition Min. Typ. Max. 1,000,000 Cycles Ta85C *1 Write Cycles 500,000 Cycles Ta105C Ta125C 300,000 Cycles Ta25C 100 Years *1 Ta105C Data Retention 60 Years 50 Years Ta125C *1: Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limits Unit Supply Voltage VCC 2.5 to 5.5 V Input Voltage Vin 0 to VCC Input / output capacity (Ta=25C, frequency=5MHz) Parameter Symbol Conditions Min Max Unit *2 Input Capacity C V =GND 8 IN IN pF *2 Output Capacity C V =GND 8 OUT OUT *2: Not 100% TESTED www.rohm.com TSZ02201-0R1R0G100300-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/28 27.Feb.2014 Rev.002 TSZ2211115001