X-On Electronics has gained recognition as a prominent supplier of BR25H040F-2CE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR25H040F-2CE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR25H040F-2CE2 ROHM

BR25H040F-2CE2 electronic component of ROHM
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Part No.BR25H040F-2CE2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM SPI BUS 10MHz 4Kbit 2.5-5.5V
Datasheet: BR25H040F-2CE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5896 ea
Line Total: USD 0.59 
Availability - 2351
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2351
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5896
10 : USD 0.5181
100 : USD 0.4785
500 : USD 0.4719
1000 : USD 0.4554
2500 : USD 0.4389
5000 : USD 0.4147
10000 : USD 0.4026
25000 : USD 0.396

   
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RoHS - XON
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Mxhts
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We are delighted to provide the BR25H040F-2CE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR25H040F-2CE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Automotive EEPROM 125 Operation SPI BUS EEPROM BR25H040-2C General Description BR25H040-2C is a serial EEPROM of SPI BUS interface method. Features High speed clock action up to 10MHz (Max.) MSOP8, TSSOP-B8, SOP8, SOP-J8 Package Wait function by HOLDB terminal. Data at shipment Memory array: FFh, status register Part or whole of memory arrays settable as read only BP1, BP0 : 0 memory area by program. More than 100 years data retention. 2.5V to 5.5V single power source action most More than 1 million write cycles. suitable AEC-Q100 Qualified. for battery use. Page write mode useful for initial value write at Package factory shipment. For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1) Self-timed programming cycle. Low Supply Current At write operation (5V) : 1.0mA (Typ.) At read operation (5V) : 1.0mA (Typ.) At standby operation (5V) : 0.1A (Typ.) Address auto increment function at read operation Prevention of write mistake Write prohibition at power on. MSOP8 TSSOP-B8 Write prohibition by command code (WRDI). 2.90mm x 4.00mm x 0.90mm 3.00mm x 6.40mm x 1.20mm Write prohibition by WPB pin. Write prohibition block setting by status registers (BP1, BP0). Prevention of write mistake at low voltage. SOP8 SOP-J8 5.00mm x 6.20mm x 1.71mm 4.90mm x 6.00mm x 1.65mm Page write Number of pages 16 Byte Product Number BR25H040-2C BR25H040-2C Capacity Bit Format Product Number Supply Voltage MSOP8 TSSOP-B8 SOP8 SOP-J8 4Kbit 5128 BR25H040-2C 2.5V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100090-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/32 21.Mar.2013 Rev.001 TSZ2211114001 DatasheetDatasheet BR25H040-2C Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Supply Voltage VCC -0.3 to +6.5 V *1 380(MSOP8) *2 410(TSSOP-B8) Permissible Dissipation Pd mW *3 560(SOP8) *4 560(SOP-J8) Storage Temperature Range Tstg -65 to +150 C Operating Temperature Range Topr -40 to +125 C Terminal Voltage -0.3 to VCC+0.3 V When using at Ta=25 or higher, 3.1mW(*1) , 3.3mW(*2) , 4.5mW (*3,*4)to be reduced per 1 Memory cell characteristics (VCC=2.5V to 5.5V) Limits Parameter Unit Condition Min. Typ. Max. 1,000,000 Cycles Ta85C *5 Write Cycles 500,000 Cycles Ta105C 300,000 Cycles Ta125C 100 Years Ta25C *5 Data Retention 60 Years Ta105C 50 Years Ta125C *5: Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limits Unit Supply Voltage VCC 2.5 to 5.5 V Input Voltage Vin 0 to VCC Input / output capacity (Ta=25C, frequency=5MHz) Parameter Symbol Conditions Min Max Unit *6 Input Capacity C V =GND 8 IN IN pF *6 Output Capacity C V =GND 8 OUT OUT *6: Not 100% TESTED www.rohm.com TSZ02201-0R1R0G100090-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/32 21.Mar.2013 Rev.001 TSZ2211115001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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