X-On Electronics has gained recognition as a prominent supplier of BR25G128FJ-3GE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR25G128FJ-3GE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR25G128FJ-3GE2 ROHM

BR25G128FJ-3GE2 electronic component of ROHM
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Part No.BR25G128FJ-3GE2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM SPI BUS 128K 1.6-5.5 Std SOP-J8
Datasheet: BR25G128FJ-3GE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5324 ea
Line Total: USD 0.53 
Availability - 2310
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2310
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5324
10 : USD 0.4884
100 : USD 0.4455
500 : USD 0.4389
1000 : USD 0.4235
2500 : USD 0.4125
5000 : USD 0.3905
10000 : USD 0.3795
25000 : USD 0.3608

   
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RoHS - XON
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We are delighted to provide the BR25G128FJ-3GE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR25G128FJ-3GE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM SPI BUS EEPROM BR25G128-3 General Description BR25G128-3 is a 128Kbit Serial EEPROM of SPI BUS Interface. Features Packages W(Typ) x D(Typ) x H(Max) High Speed Clock Action up to 20MHz (Max) Wait Function by HOLDB Terminal Part or Whole of Memory Arrays Settable as Read only Memory Area by Program 1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use. Up to 64 Bytes in Page Write Mode. SOP8 MSOP8 For SPI Bus Interface (CPOL, CPHA) = (0, 0), (1, 1) 5.00mm x 6.20mm x 1.71mm 2.90mm x 4.00mm x 0.90mm Self-timed Programming Cycle Low Current Consumption At Write Action (5V) : 0.5mA (Typ) At Read Action (5V) : 2.0mA (Typ) At Standby Action (5V) : 0.1A (Typ) Address Auto Increment Function at Read Action Prevention of Write Mistake VSON008X2030 SOP- J8 Write Prohibition at Power On 2.00mm x 3.00mm x 0.60mm 4.90mm x 6.00mm x 1.65mm Write Prohibition by Command Code (WRDI) Write Prohibition by WPB Pin Write Prohibition Block Setting by Status Registers (BP1, BP0) Prevention of Write Mistake at Low Voltage More than 100 years Data Retention. More than 1 Million Write Cycles. TSSOP-B8 Bit Format 16K8 3.00mm x 6.40mm x 1.20mm Initial Delivery Data Memory Array: FFh Figure 1. Status Register: WPEN, BP1, BP0 : 0 Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100670-1-2 2014 ROHM Co., Ltd. All rights reserved. 1/32 TSZ2211114001 19.Mar.2014 Rev.001Datasheet BR25G128-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Ratings Unit Remarks Supply Voltage V -0.3 to +6.5 V CC When using at Ta=25C or higher 4.5mW to be reduced per 1C. 0.45 (SOP8) 0.45 (SOP-J8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. When using at Ta=25C or higher 3.3mW to be reduced per 1C. Power Dissipation. Pd 0.33 (TSSOP-B8) W When using at Ta=25C or higher 3.1mW to be reduced per 1C. 0.31 (MSOP8) When using at Ta=25C or higher 3.0mW to be reduced per 1C. 0.30 (VSON008X2030) Storage Temperature Tstg - 65 to +150 C Operating Temperature Topr - 40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage / When the pulse width is 50ns or less, the Min value of Input - 0.3 to Vcc+1.0 V Output Voltage Voltage/Output Voltage is not under -1.0V. Junction Temperature Tjmax 150 C Junction temperature at the storage condition Electrostatic discharge voltage V -4000 to +4000 V ESD (human body model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limits Parameter Unit Min Typ Max (Note1) Write Cycles 1,000,000 - - Times (Note1) Data Retention 100 - - Years (Note1) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Ratings Unit Power Source Voltage Vcc 1.6 to 5.5 V Input Voltage V 0 to Vcc IN Input / Output Capacity (Ta=25C, frequency=5MHz) Parameter Symbol Min Max Unit Conditions (Note1) Input Capacity C 8 V =GND IN IN pF (Note1) Output Capacity C 8 V =GND OUT OUT (Note1) Not 100% TESTED. www.rohm.com TSZ02201-0R2R0G100670-1-2 2014 ROHM Co., Ltd. All rights reserved. 2/32 TSZ2211115001 19.Mar.2014 Rev.001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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