X-On Electronics has gained recognition as a prominent supplier of BR34E02NUX-3TR EEPROM across the USA, India, Europe, Australia, and various other global locations. BR34E02NUX-3TR EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR34E02NUX-3TR ROHM

BR34E02NUX-3TR electronic component of ROHM
BR34E02NUX-3TR ROHM
BR34E02NUX-3TR EEPROM
BR34E02NUX-3TR  Semiconductors

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See Product Specifications
Part No. BR34E02NUX-3TR
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM WL-CSP EEPROM
Datasheet: BR34E02NUX-3TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5563 ea
Line Total: USD 0.56 
Availability - 2910
Ship by Mon. 05 May to Wed. 07 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Mon. 05 May to Wed. 07 May
MOQ : 1
Multiples : 1
1 : USD 0.5563
10 : USD 0.5162
100 : USD 0.396
500 : USD 0.3729
1000 : USD 0.363
2000 : USD 0.3454
4000 : USD 0.341
8000 : USD 0.3278
24000 : USD 0.3256

   
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We are delighted to provide the BR34E02NUX-3TR from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR34E02NUX-3TR and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM Plug & Play EEPROM BR34E02-3 General Description BR34E02-3 is 2568 bit Electrically Erasable PROM (Based on Serial Presence Detect) Features Packages W(Typ) x D(Typ) x H(Max) 2568 bit Architecture Serial EEPROM Wide Operating Voltage Range: 1.7V to 5.5V Two-Wire Serial Interface Self-Timed Erase and Write Cycle Page Write Function (16byte) Write Protect Mode Settable Reversible Write Protect Function : 00h-7Fh Write Protect 1 (Onetime Rom) : 00h-7Fh Write Protect 2 (Hardwire WP PIN) : 00h-FFh Low Power consumption TSSOP-B8 Write (at 1.7V) : 0.4mA (typ) 3.00mm x 6.40mm x 1.20mm Read (at 1.7V) : 0.1mA (typ) Standby (at 1.7V) : 0.1A (typ) Prevention of Write Mistake Write Protect Feature (WP pin) Prevention of Write Mistake at Low Voltage High Reliability Fine Pattern CMOS Technology More than 1 million write cycles More than 40 years data retention Noise Reduction Filtered Inputs in SCL / SDA Initial delivery state FFh VSON008X2030 2.00mm x 3.00mm x 0.60mm BR34E02-3 Power Source Capacity Bit Format Type Package Voltage BR34E02FVT-3 TSSOP-B8 2Kbit 256x8 1.7V to 5.5V BR34E02NUX-3 VSON008X2030 Absolute Maximum Ratings (Ta=25) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V Derate by 3.3mW/ C when operating above Ta=25 C 330 (TSSOP-B8) Power Dissipation Pd mW Derate by 3.0mW/ C when operating above Ta=25 C 300 (VSON008X2030) Storage Temperature Tstg -65 to +125 Operating Temperature Topr -40 to +85 Input Voltage / Output - -0.3 to 10.0 V Voltage (A0) Input Voltage / Output - -0.3 to VCC+1.0 V Voltage (others) Electrostatic discharge voltage V -4000 to +4000 V ESD (human body model) Memory Cell Characteristics (Ta=25, V =1.7V to 5.5V) CC Limit Parameter Unit Min Typ Max (1) Write / Erase Cycle 1,000,000 - - Times (1) Data Retention 40 - - Years (1) Not 100% TESTED Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100520-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/30 TSZ2211114001 31.May.2013 Rev.003DatasheetDatasheet BR34E02-3 Recommended Operating Ratings Parameter Symbol Rating Unit Supply Voltage V 1.7 to 5.5 V CC Input Voltage V 0 to V V IN CC DC Characteristics (Unless otherwise specified Ta=-40 to +85, V =1.7V to 5.5V) CC Limit Parameter Symbol Unit Test Conditions Min Typ Max Input High Voltage V 0.7 VCC - Vcc+1.0 V IH Input Low Voltage V -0.3 - 0.3 VCC V IL Output Low Voltage 1 V - - 0.4 V I =2.1mA, 2.5VV 5.5V(SDA) OL1 OL CC Output Low Voltage 2 V - - 0.2 V I =0.7mA, 1.7VV 2.5V(SDA) OL2 OL CC Input Leakage Current 1 I -1 - 1 A V =0V to V (A0, A1, A2, SCL) LI1 IN CC Input Leakage Current 2 I -1 - 15 A V =0V to V (WP) LI2 IN CC Input Leakage Current 3 I -1 - 20 A V =V (A0) LI3 IN HV Output Leakage Current I -1 - 1 A V =0V to V LO OUT CC V =5.5V, f =400kHz, t =5ms CC SCL WR Byte Write Supply Current (Write) I - - 2.0 mA CC1 Page Write Write Protect V =5.5V, f =400kHz CC SCL Random Read Supply Current (Read) I - - 0.5 mA CC2 Current Read Sequential Read V =5.5V, SDA, SCL= V CC CC Standby Current I - - 2.0 A SB A0, A1, A2=GND, WP=GND A0 HV Voltage V 7 - 10 V V -V 4.8V HV HV CC AC Characteristics (Unless otherwise specified Ta=-40 to +85, V =1.7V to 5.5V) CC Limit Parameter Symbol Unit Min Typ Max Clock Frequency f - - 400 kHz SCL Data Clock High Period t 0.6 - - s HIGH Data Clock Low Period t 1.2 - - s LOW (1) SDA and SCL Rise Time t - - 0.3 s R (1) SDA and SCL Fall Time t - - 0.3 s F Start Condition Hold Time t 0.6 - - s HD:STA Start Condition Setup Time t 0.6 - - s SU:STA Input Data Hold Time t 0 - - ns HD:DAT Input Data Setup Time t 100 - - ns SU:DAT Output Data Delay Time t 0.1 - 0.9 s PD Output Data Hold Time t 0.1 - - s DH Stop Condition Setup Time t 0.6 - - s SU:STO Bus Free Time t 1.2 - - s BUF Write Cycle Time t - - 5 ms WR Noise Spike Width t - - 0.1 s I (SDA and SCL) WP Hold Time t 0 - - s HD:WP WP Setup Time t 0.1 - - s SU:WP WP High Period t 1.0 - - s HIGH:WP (1) Not 100% TESTED www.rohm.com TSZ02201-0R2R0G100520-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/30 TSZ2211115001 31.May.2013 Rev.003

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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