X-On Electronics has gained recognition as a prominent supplier of BR25H128F-2LBH2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR25H128F-2LBH2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR25H128F-2LBH2 ROHM

BR25H128F-2LBH2 electronic component of ROHM
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Part No.BR25H128F-2LBH2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM SPI BUS 128K 2.5-5.5 Industrial SOP8
Datasheet: BR25H128F-2LBH2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.3 ea
Line Total: USD 2.3 
Availability - 241
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
241
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 2.3
10 : USD 1.932
100 : USD 1.8285
500 : USD 1.748
1000 : USD 1.7135
2500 : USD 1.702
5000 : USD 1.6905
25000 : USD 1.633

   
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RoHS - XON
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We are delighted to provide the BR25H128F-2LBH2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR25H128F-2LBH2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Industrial EEPROM 125 Operation SPI BUS EEPROM BR25H128F-2LB General Description This is the product guarantees long time support in Industrial market. BR25H128F-2LB is a serial EEPROM of SPI BUS interface method. Features Package W(Typ.) x D(Typ.) x H(Max.) Long Time Support a Product for Industrial Applications. High speed clock action up to 10MHz (Max.) Wait function by HOLDB terminal. Part or whole of memory arrays settable as read only memory area by program. 2.5V to 5.5V single power source action most suitable for battery use. Page write mode useful for initial value write at factory shipment. SOP8 For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1) 5.00mm x 6.20mm x 1.71mm Self-timed programming cycle. Low Supply Current At write operation (5V) : 1.2mA (Typ.) At read operation (5V) : 1.0mA (Typ.) At standby operation (5V) : 0.1A (Typ.) Application Address auto increment function at read operation Industrial Equipment Prevention of write mistake Write prohibition at power on. Write prohibition by command code (WRDI). Write prohibition by WPB pin. Write prohibition block setting by status registers (BP1, BP0). Prevention of write mistake at low voltage. Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0 More than 100 years data retention. More than 1 million write cycles. Page write Number of pages 64 Byte Product Number BR25H128F-2LB BR25H128F-2LB Capacity Bit Format Product Number Supply Voltage Package 128Kbit 16Kx8 BR25H128F-2LB 2.5V to 5.5V SOP8 Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R1R0G100370-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/28 27.Feb.2014 Rev.002 TSZ2211114001 DatasheetDatasheet BR25H128F-2LB Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Remarks Supply Voltage VCC -0.3 to +6.5 V Permissible Dissipation Pd 0.56 W When using at Ta=25 or higher 4.5mW to be reduced per 1. Storage Temperature Range Tstg -65+150 C Operating Temperature Range Topr -40 to +125 C Terminal Voltage -0.3 to VCC+0.3 V Memory cell characteristics (VCC=2.5V to 5.5V) Limits Parameter Unit Condition Min. Typ. Max. 1,000,000 Cycles Ta85C *1 Write Cycles 500,000 Cycles Ta105C Ta125C 300,000 Cycles Ta25C 100 Years *1 Ta105C Data Retention 60 Years 50 Years Ta125C *1: Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limits Unit Supply Voltage VCC 2.5 to 5.5 V Input Voltage Vin 0 to VCC Input / output capacity (Ta=25C, frequency=5MHz) Parameter Symbol Conditions Min Max Unit *2 Input Capacity C V =GND 8 IN IN pF *2 Output Capacity C V =GND 8 OUT OUT *2: Not 100% TESTED www.rohm.com TSZ02201-0R1R0G100370-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/28 27.Feb.2014 Rev.002 TSZ2211115001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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