Datasheet
Serial EEPROM Series Automotive EEPROM
105 Operation Microwire BUS EEPROM (3-Wire)
BR93Axx-WM
(1K 2K 4K 8K 16K)
General Description
BR93Axx-WM is serial EEPROM of serial 3-line interface method.
Features Packages W(Typ.) x D(Typ.) x H(Max.)
3-line communications of chip select, serial clock, serial data
input / output (the case where input and output are shared)
Wide temperature range -40 to +105
Operations available at high speed 2MHz clock(2.5V to 5.5V)
Speed write available (write time 5ms max.)
Same package and pin layout from 1Kbit to 16Kbit
2.5V to 5.5V single power source operation
SOP- J8
SOP8
Address auto increment function at read operation
5.00mm x 6.20mm x 1.71mm 4.90mm x 6.00mm x 1.65mm
Write mistake prevention function
Write prohibition at power on
Write prohibition by command code
Write mistake prevention function at low voltage
Program cycle auto delete and auto end function
Program condition display by READY / BUSY
Low current consumption
TSSOP-B8
MSOP8
At write operation (at 5V) : 1.2mA (Typ.)
3.00mm x 6.40mm x 1.20mm
2.90mm x 4.00mm x 0.90mm
At read operation (at 5V) : 0.3mA (Typ.)
At standby condition (at 5V) : 0.1A (Typ.)(CMOS input)
TTL compatible (input / output s)
Data retention for 40 years(Ta25)
Endurance up to 1,000,000 times(Ta25)
Data at shipment all addresses FFFFh
AEC-Q100 Qualified
BR93Axx-WM
Package type SOP8 SOP-J8 TSSOP-B8 MSOP8
Power source
Capacity Bit format Type F RF FJ RFJ RFVT RFVM
voltage
1Kbit 6416 BR93A46-WM 2.5V to 5.5V
2Kbit 12816 BR93A56-WM 2.5V to 5.5V
4Kbit 25616 BR93A66-WM 2.5V to 5.5V
8Kbit 51216 BR93A76-WM 2.5V to 5.5V
16Kbit 1K16 BR93A86-WM 2.5V to 5.5V
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays
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TSZ02201-0R1R0G100150-1-2
2013 ROHM Co., Ltd. All rights reserved.
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TSZ2211114001
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BR93Axx-WM (1K 2K 4K 8K 16K)
Absolute Maximum Ratings (Ta=25)
Parameter Symbol Limits Unit Remarks
Supply voltage VCC -0.3 to +6.5 V
When using at Ta=25 or higher, 4.5mW to be reduced per 1.
0.45 (SOP8)
When using at Ta=25 or higher, 4.5mW to be reduced per 1.
0.45 (SOP-J8)
Permissible
Pd W
dissipation
When using at Ta=25 or higher, 3.3mW to be reduced per 1.
0.33 (TSSOP-B8)
0.31 (MSOP8) When using at Ta=25 or higher, 3.1mW to be reduced per 1.
Storage temperature range Tstg -65 to +125
Operating temperature range Topr -40 to +105
Terminal voltage -0.3 to VCC+0.3 V
Memory Cell Characteristics (VCC=2.5V to 5.5V)
Limit
Parameter Unit Condition
Min. Typ. Max.
1,000,000 - - Ta25
550,000 Ta60
*1
Endurance Times
200,000 Ta85
100,000 - - Ta105
40 - - Ta25
*1
Data retention Years
10 - - Ta105
Shipment data all address FFFFh
*1Not 100 TESTED
Recommended Operating Ratings
Parameter Symbol Limits Unit
Power source voltage VCC 2.5 to 5.5
V
Input voltage VIN 0 to VCC
Electrical Characteristics
(Unless otherwise specified, VCC=2.5V to 5.5V, Ta=-40to +105)
Limits
Parameter Symbol Unit Condition
Min. Typ. Max.
L input voltage 1 VIL1 -0.3 - 0.8 V 4.0VVCC5.5V
L input voltage 2 VIL2 -0.3 - 0.2 x VCC V VCC4.0V
H input voltage 1 VIH1 2.0 - VCC+0.3 V 4.0VVCC5.5V
H input voltage 2 VIH2 0.7 x VCC - VCC+0.3 V VCC4.0V
L output voltage 1 VOL1 0 - 0.4 V IOL=2.1mA, 4.0VVCC5.5V
L output voltage 2 VOL2 0 - 0.2 V IOL=100A
H output voltage 1 VOH1 2.4 - VCC V IOH=-0.4mA, 4.0VVCC5.5V
H output voltage 2 VOH2 VCC-0.2 - VCC V IOH=-100A
Input leak current ILI -1 - 1 A VIN=0V to VCC
Output leak current ILO -1 - 1 A VOUT=0V to VCC, CS=0V
ICC1 - - 3.0 mA fSK=2MHz, tE/W=5ms (WRITE)
Current consumption ICC2 - - 1.5 mA fSK=2MHz (READ)
ICC3 - - 4.5 mA fSK=2MHz, tE/W=5ms (WRAL, ERAL)
Standby current ISB - - 2 A CS=0V, DO=OPEN
www.rohm.com
TSZ02201-0R1R0G100150-1-2
2013 ROHM Co., Ltd. All rights reserved.
2/29
TSZ2211115001
6.Nov.2013 Rev.003