X-On Electronics has gained recognition as a prominent supplier of BR93G46FVT-3GE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR93G46FVT-3GE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR93G46FVT-3GE2 ROHM

BR93G46FVT-3GE2 electronic component of ROHM
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Part No.BR93G46FVT-3GE2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM Microwire BUS 1Kbit(64x16bit)
Datasheet: BR93G46FVT-3GE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.638 ea
Line Total: USD 0.64 
Availability - 2899
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2899
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.638
10 : USD 0.528
100 : USD 0.4917
500 : USD 0.4818
1000 : USD 0.4653
3000 : USD 0.3938
6000 : USD 0.3905
9000 : USD 0.3905
24000 : USD 0.3905

   
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RoHS - XON
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We are delighted to provide the BR93G46FVT-3GE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR93G46FVT-3GE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM series Standard EEPROM Micr oWire BUS EEPROM (3-Wire) BR93G46-3 General Description BR93G46-3 is serial EEPROM of serial 3-line Interface method. They are dual organization(by 16bit or 8bit) and it is selected by the input of ORG PIN. Features Packages W(Typ.) x D(Typ.)x H(Max.) 3-line communications of chip select, serial clock, serial data input / output (the case where input and Not Recommended for output are shared) New Designs Operations available at high speed 3MHz clock (4.5 V~5.5 V) High speed write available (write time 5ms max.) DIP-T8 TSSOP-B8 Same package and pin configuration from 1Kbit to 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm 16Kbit 1.7~5.5V single power source operation Address auto increment function at read operation Write mistake prevention function Write prohibition at power on SOP8 TSSOP-B8J Write prohibition by command code 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm Write mistake prevention function at low voltage Self-timed programming cycle Program condition display by READY / BUSY Dual organization : by 16 bit (X16) or 8 bit (X8) Compact package SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/ SOP- J8 MSOP8 TSSOP-B8J/VSON008X2030 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm More than 40 years data retention More than 1 million write cycles Initial delivery state all addresses FFFFh (X16) or FFh (X8) SSOP-B8 VSON008X2030 3.00mm x 6.40mm x 1.35mm 2.00mm x 3.00mm x 0.60mm BR93G46-3 Power source VSON008 *1 DIP-T8 SOP8 SOP-J8 SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8 Capacity Bit format Type X2030 voltage 1Kbit 6416 or1288 BR93G46-3 1.7~5.5V *1 DIP-T8 is not halogen free package. Not Recommended for New Designs. Product structure : Silicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-09190G100130-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/36 TSZ22111 14 001 11.Jun.2019 Rev.003 BR93G46-3 Absolute Maximum Ratings Parameter Symbol Ratings Unit Remarks Supply voltage VCC -0.3 to +6.5 V *1 800 (DIP-T8 ) When using at Ta=25 or higher 8.0mW to be reduced per 1 . 450 (SOP8) When using at Ta=25 or higher 4.5mW to be reduced per 1 . 450 (SOP-J8) When using at Ta=25 or higher 4.5mW to be reduced per 1 . 300 (SSOP-B8) When using at Ta=25 or higher 3.0mW to be reduced per 1 . Permissible Pd mW dissipation 330 (TSSOP-B8) When using at Ta=25 or higher 3.3mW to be reduced per 1 . 310 (TSSOP-B8J) When using at Ta=25 or higher 3.1mW to be reduced per 1 . 310 (MSOP8) When using at Ta=25 or higher 3.1mW to be reduced per 1 . 300 (VSON008X2030) When using at Ta=25 or higher 3.0mW to be reduced per 1 . Storage Tstg -65 to +150 C temperature Operating Topr -40 to +85 C temperature The Max value of Input voltage/output voltage is not over 6.5V. Input voltage/ When the pulse width is 50ns or less, the Min value of Input - -0.3 to Vcc+1.0 V Output voltage voltage/Output voltage is not under -0.8V. Junction Tjmax 150 C Junction temperature at the storage condition temperature *1 Not Recommended for New Designs. Memory cell characteristics (VCC=1.7~5.5V) Limit Parameter Unit Condition Min. Typ. Max. *2 Write cycles 1,000,000 - - Times Ta=25C *2 Data retention 40 - - Years Ta=25C Shipment data all address FFFFh(X16) or FFh(X8) *2 Not 100% TESTED Recommended Operation Ratings Parameter Symbol Limits Unit Supply voltage VCC 1.7~5.5 V Input voltage VIN 0~VCC www.rohm.com TSZ02201-09190G100130-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/36 TSZ22111 15 001 11.Jun.2019 Rev.003

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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