BR93G56FVM-3BGTTR ROHM

Datasheet Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM (3-Wire) BR93G56-3B General Description BR93G56-3B is serial EEPROM of Serial 3-Line Interface Method. They are 16bit organization and CS PIN is the third PIN in their PIN configuration. Features Packages W(Typ) x D(Typ)x H(Max) 3-Line Communications of chip select, serial clock, Not Recommended for serial data input / output (the case where input and New Designs output are shared) Operations available at High Speed 3MHz clock DIP-T8 TSSOP-B8 (4.5V to 5.5V) 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm High Speed Write available (Write Time 5ms max) Same package and pin configuration from 1Kbit to 16Kbit 1.7V to 5.5V Single Power Source Operation Address Auto Increment function at Read Operation Write Error Prevention Function SOP8 TSSOP-B8J Write Prohibition at Power On 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm Write Prohibition by Command Code Write Error Prevention Function at Low Voltage Self-timed Programming Cycle Program Condition Display by READY / BUSY Compact Package SOP- J8 MSOP8 SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm TSSOP-B8J VSON008X2030 More than 40 years data retention More than 1 million write cycles Initial delivery state all addresses FFFFh (X16) SSOP-B8 VSON008X2030 3.00mm x 6.40mm x 1.35mm 2.00mm x 3.00mm x 0.60mm BR93G56-3B Power Source VSON008 (1) Capacity Bit Format Type DIP-T8 SOP8 SOP-J8 SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8 X2030 Voltage 2Kbit 12816 BR93G56-3B 1.7V to 5.5V (1) DIP-T8 is not halogen free package. Not Recommended for New Designs. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays. www.rohm.com TSZ02201-09190G100030-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/36 TSZ22111 14 001 11.Jun.2019 Rev.004 BR 9 3 G 56 - 3 B Absolute Maximum Ratings Parameter Symbol Rating Unit Remark Supply Voltage Vcc -0.3 to +6.5 V (1) 800 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C 450 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 450 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 300 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C Permissible Pd mW Dissipation 330 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C 310 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 310 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 300 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C Storage Tstg -65 to +150 C Temperature Operating Topr -40 to +85 C Temperature The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage/ When the pulse width is 50ns or less, the Min value of Input - -0.3 to Vcc+1.0 V Output Voltage Voltage/Output Voltage is not under -0.8V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature (1) Not Recommended for New Designs. Memory Cell Characteristics (Vcc=1.7V to 5.5V) Limit Parameter Unit Conditions Min Typ Max (2) Write Cycles 1,000,000 - - Times Ta=25C (2) Data Retention 40 - - Years Ta=25C Initial data in all addresses are FFFFh(X16) upon delivery. (2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limit Unit Supply Voltage VCC 1.7 to 5.5 V Input Voltage VIN 0 to VCC www.rohm.com TSZ02201-09190G100030-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/36 11.Jun.2019 Rev.004 TSZ22111 15 001