X-On Electronics has gained recognition as a prominent supplier of BR93G76FVM-3BGTTR EEPROM across the USA, India, Europe, Australia, and various other global locations. BR93G76FVM-3BGTTR EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR93G76FVM-3BGTTR ROHM

BR93G76FVM-3BGTTR electronic component of ROHM
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Part No.BR93G76FVM-3BGTTR
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM Microwire BUS 8K 512 16bit EEPROM
Datasheet: BR93G76FVM-3BGTTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3234 ea
Line Total: USD 0.32 
Availability - 2909
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2909
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3234
10 : USD 0.3168
100 : USD 0.2673
500 : USD 0.264
3000 : USD 0.2299
9000 : USD 0.2266
24000 : USD 0.2222
45000 : USD 0.2167

   
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We are delighted to provide the BR93G76FVM-3BGTTR from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR93G76FVM-3BGTTR and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM series Standard EEPROM Micr oWire BUS EEPROM (3-Wire) BR93G76-3B General Description BR93G76-3B is serial EEPROM of serial 3-line Interface method. They are 16bit organization and CS PIN is the third PIN in their PIN configuration. Features Packages W(Typ.) x D(Typ.)x H(Max.) 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared) Not Recommended for Operations available at high speed 3MHz clock New Designs (4.5V ~ 5.5V) High speed write available (write time 5ms max.) DIP-T8 TSSOP-B8 Same package and pin configuration from 1Kbit to 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm 16Kbit 1.7~5.5V single power source operation Address auto increment function at read operation Write mistake prevention function Write prohibition at power on SOP8 TSSOP-B8J Write prohibition by command code 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm Write mistake prevention function at low voltage Self-timed programming cycle Program condition display by READY / BUSY Compact package SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/ TSSOP-B8J/VSON008X2030 SOP- J8 MSOP8 More than 40 years data retention 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm More than 1 million write cycles Initial delivery state all addresses FFFFh SSOP-B8 VSON008X2030 3.00mm x 6.40mm x 1.35mm 2.00mm x 3.00mm x 0.60mm BR93G76-3B Power source VSON008 *1 Capacity Bit format Type DIP-T8 SOP8 SOP-J8 SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8 X2030 voltage 8Kbit 51216 BR93G76-3B 1.7~5.5V *1 DIP-T8 is not halogen free package. Not Recommended for New Designs. Product structure : Silicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-09190G100090-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/36 TSZ22111 14 001 11.Jun.2019 Rev.002 BR 9 3 G 7 6 - 3 B Absolute Maximum Ratings Parameter Symbol Ratings Unit Remarks Supply voltage VCC -0.3 to +6.5 V *1 When using at Ta=25C or higher 8.0mW to be reduced per 1C. 800 (DIP-T8 ) 450 (SOP8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 450 (SOP-J8) When using at Ta=25C or higher 4.5mW to be reduced per 1C. 300 (SSOP-B8) When using at Ta=25C or higher 3.0mW to be reduced per 1C. Permissible Pd mW dissipation 330 (TSSOP-B8) When using at Ta=25C or higher 3.3mW to be reduced per 1C. 310 (TSSOP-B8J) When using at Ta=25C or higher 3.1mW to be reduced per 1C. 310 (MSOP8) When using at Ta=25C or higher 3.1mW to be reduced per 1C. 300 (VSON008X2030) When using at Ta=25C or higher 3.0mW to be reduced per 1C. Storage Tstg -65 to +150 C temperature Operating Topr -40 to +85 C temperature The Max value of lnput voltage/Output voltage is not over 6.5V. Input voltage/ - -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of Input Output voltage voltage/Output voltage is not under -0.8V. Junction Tjmax 150 C Junction temperature at the storage condition temperature *1 Not Recommended for New Designs. Memory cell characteristics (VCC=1.7~5.5V) Limit Parameter Unit Condition Min. Typ. Max. *2 Write cycles 1,000,000 - - Times Ta=25C *2 Data retention 40 - - Years Ta=25C Shipment data all address FFFFh *2 Not 100% TESTED Recommended Operation Ratings Parameter Symbol Limits Unit Supply voltage VCC 1.7~5.5 V Input voltage VIN 0~VCC www.rohm.com TSZ02201-09190G100090-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/36 11.Jun.2019 Rev.002 TSZ22111 15 001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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