X-On Electronics has gained recognition as a prominent supplier of BR93L46RFVT-WE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR93L46RFVT-WE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR93L46RFVT-WE2 ROHM

BR93L46RFVT-WE2 electronic component of ROHM
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Part No.BR93L46RFVT-WE2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM McrWre BUS 3-Wre 1K TSSOP-B8 EEPROM
Datasheet: BR93L46RFVT-WE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.3157 ea
Line Total: USD 947.1 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3157
9000 : USD 0.2992
24000 : USD 0.2926
45000 : USD 0.2772

   
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RoHS - XON
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Cnhts
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Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BR93L46RFVT-WE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR93L46RFVT-WE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM(3-Wire) BR93Lxx-W General Description BR93Lxx-W is serial EEPROM of serial 3-line interface method Features Packages W(Typ.) x D(Typ.) x H(Max.) 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared) Actions available at high speed 2MHz clock(2.5V to 5.5V) Speed write available (write time 5ms max. Same package and pin layout from 1Kbit to 16Kbit 1.8V to 5.5V single power source action Address auto increment function at read action SOP8 TSSOP-B8 Write mistake prevention function 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.20mm Write prohibition at power on Write prohibition by command code Write mistake prevention function at low voltage Program cycle auto delete and auto end function Program condition display by READY / BUSY Low current consumption SOP- J8 TSSOP-B8J At write action (at 5V) : 1.2mA (Typ.) 4.90mm x 6.00mm x 1.65mm 3.00mm x 4.90mm x 1.10mm At read action (at 5V) : 0.3mA (Typ.) At standby action (at 5V) : 0.1A (Typ.)(CMOS input) TTL compatible( input / outputs) Data retention for 40 years Endurance up to 1,000,000 times Data at shipment all addresses FFFFh SSOP-B8 MSOP8 3.00mm x 6.40mm x 1.35mm 2.90mm x 4.00mm x 0.90mm DIP-T8 9.30mm x 6.50mm x 7.10mm Figure.1 BR93Lxx-W TSSOP- Package type SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 DIP-T8 B8J Power source Capacity Bit format Type F RF FJ RFJ FV RFVFVTRFVT RFVM RFVJ - voltage 1Kbit 6416 BR93L46-W 1.8V to 5.5V 2Kbit 12816 BR93L56-W 1.8V to 5.5V 4Kbit 25616 BR93L66-W 1.8V to 5.5V 8Kbit 51216 BR93L76-W 1.8V to 5.5V 16Kbit 1K16 BR93L86-W 1.8V to 5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100390-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/35 TSZ2211114001 15.Oct.2013 Rev.002DatasheetDatasheet BR93Lxx-W Absolute Maximum Ratings (Ta=25) Remarks Parameter Symbol Limits Unit Impressed voltage VCC -0.3 to +6.5 V When using at Ta=25 or higher, 4.5mW, to be reduced per 1. 450 (SOP8) When using at Ta=25 or higher, 4.5mW, to be reduced per 1. 450 (SOP-J8) When using at Ta=25 or higher, 3.0mW, to be reduced per 1. 300 (SSOP-B8) Permissible dissipation Pd mW 330 (TSSOP-B8) When using at Ta=25 or higher, 3.3mW, to be reduced per 1. When using at Ta=25 or higher, 3.1mW, to be reduced per 1. 310 (MSOP8) When using at Ta=25 or higher, 3.1mW, to be reduced per 1. 310 (TSSOP-B8J) 800(DIP-T8) When using at Ta=25 or higher, 8.0mW, to be reduced per 1 Storage temperature range Tstg -65 to +125 Action temperature range Topr -40 to +85 Terminal voltage -0.3 to VCC+0.3 V Memory Cell Characteristics(VCC=1.8V to 5.5V) Limit Parameter Unit Condition Min. Typ. Max. *1 Endurance 1,000,000 - - Times Ta=25 *1 Data retention 40 - - Years Ta=25 Shipment data all address FFFFh *1Not 100 TESTED Recommended Operating Ratings Unit Parameter Symbol Limits Power source voltage VCC 1.8 to 5.5 V Input voltage VIN 0 to VCC www.rohm.com TSZ02201-0R2R0G100390-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/35 TSZ2211115001 15.Oct.2013 Rev.002

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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