BR25H320FVT-2CE2 ROHM

Datasheet Serial EEPROM Series Automotive EEPROM 125 Operation SPI BUS EEPROM BR25H320-2C General Description BR25H320-2C is a serial EEPROM of SPI BUS interface method. MSOP8, TSSOP-B8, SOP8, SOP-J8 Package Features Data at shipment Memory array: FFh, status register High speed clock action up to 10MHz (Max.) WPEN, BP1, BP0 : 0 Wait function by HOLDB terminal. Data kept for 50 years (Ta125). Part or whole of memory arrays settable as read only memory area by program. Data rewrite up to 300,000 times (Ta125). 2.55.5V single power source action most suitable AEC-Q100 Qualified. for battery use. Page write mode useful for initial value write at Package factory shipment. For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1) Self-timed programming cycle. Low Supply Current At Write Operation (5V) : 1.0mA (Typ.) At Read Operation (5V) : 1.0mA (Typ.) At Standby Operation (5V) : 0.1A (Typ.) Address auto increment function at read operation Prevention of write mistake MSOP8 TSSOP-B8 Write prohibition at power on. 2.90mm x 4.00mm x 0.90mm 3.00mm x 6.40mm x 1.20mm Write prohibition by command code (WRDI). Write prohibition by WPB pin. Write prohibition block setting by status registers (BP1, BP0). Write mistake prevention function at low voltage. SOP8 SOP-J8 5.00mm x 6.20mm x 1.71mm 4.90mm x 6.00mm x 1.65mm Page write Number of pages 32 Byte Product Number BR25H320-2C BR25H320-2C Capacity Bit Format Product Number Supply Voltage MSOP8 TSSOP-B8 SOP8 SOP-J8 32Kbit 4Kx8 BR25H320-2C 2.5~5.5V Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays www.rohm.com TSZ02201-0W1W0G100010-1-2 2012 ROHM Co., Ltd. All rights reserved. 1/31 19.Dec.2012 Rev.003 TSZ2211114001 DatasheetDatasheet BR25H320-2C Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Supply Voltage VCC -0.3~+6.5 V *1 380(MSOP8) *2 410(TSSOP-B8) Permissible Dissipation Pd mW *3 560(SOP8) *4 560(SOP-J8) Storage Temperature Range Tstg -65+150 C -40+125 Operating Temperature Range Topr C Terminal Voltage -0.3VCC+0.3 V When using at Ta=25 or higher, 3.1mW(*1) , 3.3mW(*2) , 4.5mW (*3,*4)to be reduced per 1 Memory cell characteristics (VCC=2.5V5.5V) Limits Parameter Unit Condition Min. Typ. Max. 1,000,000 Cycles Ta85C *5 Write Cycles 500,000 Cycles Ta105C 300,000 Cycles Ta125C 100 Years Ta25C *5 Data Retention 60 Years Ta105C 50 Years Ta125C *5: Not 100% TESTED Recommended Operating Ratings Parameter Symbol Limits Unit 2.55.5 Supply Voltage VCC V Input Voltage Vin 0VCC Input / output capacity (Ta=25C, frequency=5MHz) Parameter Symbol Conditions Min Max Unit *6 Input Capacity C V =GND 8 IN IN pF *6 Output Capacity C V =GND 8 OUT OUT *6: Not 100% TESTED www.rohm.com TSZ02201-0W1W0G100010-1-2 2012 ROHM Co., Ltd. All rights reserved. 2/31 19.Dec.2012 Rev.003 TSZ2211115001