X-On Electronics has gained recognition as a prominent supplier of BRCD016GWZ-3E2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BRCD016GWZ-3E2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BRCD016GWZ-3E2 ROHM

BRCD016GWZ-3E2 electronic component of ROHM
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Part No.BRCD016GWZ-3E2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM I2C BUS(2-Wre) 16K UCSP35L1 EEPROM
Datasheet: BRCD016GWZ-3E2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.4734 ea
Line Total: USD 1420.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.4734
6000 : USD 0.4629
9000 : USD 0.4466
24000 : USD 0.4373

   
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We are delighted to provide the BRCD016GWZ-3E2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BRCD016GWZ-3E2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BRCD016GWZ-3 General Description 2 BRCD016GWZ-3 is a 16Kbit serial EEPROM of I C BUS Interface Method Packages W(Typ) x D(Typ) x H(Max) Features 2 UCSP35L1 1.30mm x0.77mm x 0.40mm Completely Conforming to the World Standard I C BUS. All Controls Available by 2 Ports of Serial Clock (SCL) and serial data (SDA) Other Devices than EEPROM can be Connected to the Same Port, Saving Microcontroller Port 1.7V to 3.6V Single Power Source Operation Most Suitable for Battery Use 1.7V to 3.6V Wide Limit of Operating Voltage, Possible FAST MODE 400KHz Operation Up to 16 Byte in Page Write Mode Bit Format 2K x 8 Self-timed Programming Cycle Low Current Consumption Prevention of Write Mistake Write (Write Protect) Function Added Prevention of write mistake at low voltage More than 1 Million Write Cycles More than 40 Years Data Retention Noise Filter Built in SCL / SDA Terminal Initial Delivery State FFh Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2G0G100620-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/24 TSZ2211114001 24.Oct.2013 Rev.001Datasheet BRCD016GWZ-3 Absolute Maximum Ratings (Ta=25C) Rating Parameter Symbol Unit Remark Supply Voltage V -0.3 to +6.5 V CC Power Dissipation Pd 0.22(UCSP35L1) W Derate by 2.2mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +125 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage/ - -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of Input Output Voltage Voltage/Output Voltage is not below 1.0V. Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Memory Cell Characteristics (Ta=25C, Vcc=1.7V to 3.6V) Limit Parameter Unit Min Typ Max (Note1) 1,000,000 - - Times Write Cycles (Note1) 40 - - Years Data Retention (Note1) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage Vcc 1.7 to 3.6 V Input Voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.7V to 3.6V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 V 0.7Vcc - Vcc+1.0 V 1.7V Vcc3.6V IH1 (Note2) Input Low Voltage1 V -0.3 - +0.3Vcc V 1.7V Vcc3.6V IL1 Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VVcc3.6V (SDA) OL1 OL Output Low Voltage2 V - - 0.2 V I =0.7mA, 1.7VVcc2.5V (SDA) OL2 OL Input Leakage Current I -1 - +1 A V =0 to Vcc LI IN Output Leakage Current I -1 - +1 A V =0 to Vcc (SDA) LO OUT Vcc=3.6V, f =400kHz, t =5ms, SCL WR Supply Current (Write) I - - 2.0 mA CC1 Byte Write, Page Write Vcc=3.6V, f =400kHz SCL Random Read, current Read, Sequential Supply Current (Read) I - - 0.5 mA CC2 Read WP=3.6V or Vcc Vcc=3.6V, SDASCL=Vcc Standby Current I - - 2.0 A SB WP=GND, TEST=GND (Note2) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2G0G100620-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/24 TSZ2211115001 24.Oct.2013 Rev.001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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