X-On Electronics has gained recognition as a prominent supplier of CAV25040VE-GT3 EEPROM across the USA, India, Europe, Australia, and various other global locations. CAV25040VE-GT3 EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

CAV25040VE-GT3 ON Semiconductor

CAV25040VE-GT3 electronic component of ON Semiconductor
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Part No.CAV25040VE-GT3
Manufacturer: ON Semiconductor
Category: EEPROM
Description: EEPROM 4KB SPI SER CMOS EEP
Datasheet: CAV25040VE-GT3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
993: USD 0.4237 ea
Line Total: USD 420.73 
Availability - 0
MOQ: 993  Multiples: 993
Pack Size: 993
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 993
Multiples : 993
993 : USD 0.4237

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5535
10 : USD 0.7689
25 : USD 0.575
50 : USD 0.5489
100 : USD 0.4909
250 : USD 0.4877
3000 : USD 0.4494

   
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We are delighted to provide the CAV25040VE-GT3 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CAV25040VE-GT3 and other electronic components in the EEPROM category and beyond.

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CAV25010, CAV25020, CAV25040 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM Description The CAV25010/20/40 are 1 Kb/2 Kb/4 Kb Serial CMOS CAV25010, CAV25020, CAV25040 MARKING DIAGRAMS 25010E = CAV25010 S01E = CAV25010 25020E = CAV25020 S02E = CAV25020 25xx0E 25040E = CAV25040 S04E = CAV25040 SxxE AYMXXX A = Assembly Location A = Assembly Location AYMXXX Y = Production Year (Last Digit) Y = Production Year (Last Digit) M = Production Month (19, O, N, D) M = Production Month (19, O, N, D) XXX = Last Three Digits of XXX = Last Three Digits of (TSSOP8) XXX = Assembly Lot Number XXX = Assembly Lot Number (SOIC8) = PbFree Package = PbFree Package Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to V + 0.5 V CC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR Table 3. D.C. OPERATING CHARACTERISTICS (V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Read Mode) Read, V = 5.5 V, 10 MHz, SO open 2 mA CCR CC I Supply Current (Write Mode) Write, V = 5.5 V, 10 MHz, SO open 2 mA CCW CC I Standby Current V = GND or V , CS = V , 2 A SB1 IN CC CC WP = V , V = 5.5 V CC CC I Standby Current V = GND or V , CS = V , 5 A SB2 IN CC CC WP = GND, V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V , 1 2 A LO CC V = GND or V OUT CC V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL OL V Output High Voltage I = 1.6 mA V 0.8 V V OH OH CC Table 4. PIN CAPACITANCE (Note 2) (T = 25C, f = 1.0 MHz, V = +5.0 V) A CC Symbol Test Conditions Min Typ Max Units C Output Capacitance (SO) V = 0 V 8 pF OUT OUT C Input Capacitance (CS, SCK, SI, WP, HOLD) V = 0 V 8 pF IN IN 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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