X-On Electronics has gained recognition as a prominent supplier of CAV25512YE-GT3 EEPROM across the USA, India, Europe, Australia, and various other global locations. CAV25512YE-GT3 EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

CAV25512YE-GT3 ON Semiconductor

CAV25512YE-GT3 electronic component of ON Semiconductor
CAV25512YE-GT3 ON Semiconductor
CAV25512YE-GT3 EEPROM
CAV25512YE-GT3  Semiconductors

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See Product Specifications
Part No. CAV25512YE-GT3
Manufacturer: ON Semiconductor
Category: EEPROM
Description: EEPROM 512KB SPI SER CMOS E
Datasheet: CAV25512YE-GT3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
323: USD 1.2616 ea
Line Total: USD 407.5 
Availability - 0
MOQ: 323  Multiples: 323
Pack Size: 323
Availability Price Quantity
0
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 1.0776
6000 : USD 1.0721
9000 : USD 1.0665
12000 : USD 1.061
15000 : USD 1.0552
24000 : USD 1.0496
30000 : USD 1.0438
45000 : USD 1.038
75000 : USD 1.0321

0
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 323
Multiples : 323
323 : USD 1.2616

0
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 6.5429
10 : USD 2.3665
25 : USD 2.3564
100 : USD 2.1258
500 : USD 2.1258
1000 : USD 2.0656
3000 : USD 2.0155

   
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We are delighted to provide the CAV25512YE-GT3 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CAV25512YE-GT3 and other electronic components in the EEPROM category and beyond.

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EEPROM Serial 512-Kb SPI Automotive Grade 1 CAV25512 Description The CAV25512 is a EEPROM Serial 512Kb SPI Automotive Grade 1 device internally organized as 64Kx8 bits. This features a www.onsemi.com 128byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAV25512 device. The device features software and hardware write protection, including partial as well as full array protection. WLCSP8 TSSOP8 SOIC8 OnChip ECC (Error Correction Code) makes the device suitable C8A SUFFIX Y SUFFIX V SUFFIX CASE 567MB CASE 948AL for high reliability applications. CASE 751BD Features Automotive AECQ100 Grade 1 (40C to +125C) Qualified PIN CONFIGURATION Pin A1 Reference 10 MHz SPI Compatible V CS CC 2.5 V to 5.5 V Supply Voltage Range 1 SO HOLD SPI Modes (0,0) & (1,1) SI VCC WP SCK 128byte Page Write Buffer SCK Additional Identification Page with Permanent Write Protection V SI SS HOLD WP Selftimed Write Cycle SOIC (V), TSSOP (Y) SO Hardware and Software Protection VSS CS Block Write Protection 1 1 Protect / , / or Entire EEPROM Array 4 2 Low Power CMOS Technology WLCSP (C8A) 1,000,000 Program/Erase Cycles (Top View) 100 Year Data Retention SOIC, TSSOP and WLCSP 8lead Packages PIN FUNCTION This Device is PbFree, Halogen Free/BFR Free, and RoHS Compliant Pin Name Function CS Chip Select V CC SO Serial Data Output WP Write Protect SI V Ground CS SS CAV25512 SO WP SI Serial Data Input HOLD SCK Serial Clock SCK HOLD Hold Transmission Input V Power Supply CC V SS Figure 1. Functional Symbol ORDERING INFORMATION This document contains information on some products that are still under development. See detailed ordering and shipping information in the package ON Semiconductor reserves the right to change or discontinue these products without dimensions section on page 10 of this data sheet. notice. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: September, 2020 Rev. 7 CAV25512/DCAV25512 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3, 4) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are reprogrammed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D. C. OPERATING CHARACTERISTICS (V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Read Mode) Read, SO open, f = 10 MHz 3 mA CCR SCK I Supply Current (Write Mode) Write, CS = V 2 mA CCW CC I Standby Current V = GND or V , CS = V , WP = V , 3 A SB1 IN CC CC CC HOLD = V , V = 5.5 V CC CC I Standby Current V = GND or V , CS = V , WP = GND, 5 A SB2 IN CC CC HOLD = GND, V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V V = GND or V 2 2 A LO CC OUT CC V Input Low Voltage 0.5 0.3V V IL CC V Input High Voltage 0.7V V + 0.5 V IH CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL OL V Output High Voltage I = 1.6 mA V 0.8V V OH OH CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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