EEPROM Serial 1-Mb SPI Automotive Grade 1 CAV25M01 Description The CAV25M01 is a EEPROM Serial 1Mb SPI Automotive Grade 1 device internally organized as 128Kx8 bits. This features a www.onsemi.com 256byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAV25M01 device. The device features software and hardware write protection, including partial as well as full array protection. SOIC8 TSSOP8 WLCSP8 V SUFFIX Y SUFFIX C8A SUFFIX OnChip ECC (Error Correction Code) makes the device suitable CASE 751BD CASE 948AL CASE 567TJ for high reliability applications. Features Automotive AECQ100 Grade 1 (40C to +125C) Qualified PIN CONFIGURATION Pin A1 Reference 10 MHz SPI Compatible V CS 1 CC 2.5 V to 5.5 V Supply Voltage Range SO HOLD WP SCK SPI Modes (0,0) & (1,1) V SI SS SCK VCC 256byte Page Write Buffer SOIC (V), HOLD Additional Identification Page with Permanent Write Protection TSSOP (Y) SI CS (Top View) Selftimed Write Cycle WP Hardware and Software Protection VSS SO Block Write Protection Protect 1/4, 1/2 or Entire EEPROM Array Low Power CMOS Technology WLCSP (C8A) 1,000,000 Program/Erase Cycles (Top View) 100 Year Data Retention 8 lead SOIC, TSSOP and WLCSP Packages PIN FUNCTION This Device is PbFree, Halogen Free/BFR Free and is RoHS Compliant Pin Name Function V CC CS Chip Select SO Serial Data Output SI WP Write Protect CS V Ground SS CAV25M01 SO WP SI Serial Data Input HOLD SCK Serial Clock SCK HOLD Hold Transmission Input V Power Supply CC V SS Figure 1. Functional Symbol This document contains information on some products that are still under development. ORDERING INFORMATION ON Semiconductor reserves the right to change or discontinue these products without See detailed ordering and shipping information in the package notice. dimensions section on page 10 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: February, 2020 Rev. 7 CAV25M01/DCAV25M01 MARKING DIAGRAMS SM1A 25M AYMXXX 25M01A AYW AYMXXX (WLCSP8) (TSSOP8) 25M = Specific Device Code SM1A = Specific Device Code (SOIC8) A = Assembly Location A = Assembly Location Y = Year 25M01A = Specific Device Code Y = Production Year (Last Digit) W = Work Week A = Assembly Location M = Production Month (19, O, N, D) Y = Production Year (Last Digit) XXX = Last Three Digits of M = Production Month (19, O, N, D) = Assembly Lot Number XXX = Last Three Digits of = PbFree Microdot XXX = Assembly Lot Number Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C CC 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are reprogrammed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D. C. OPERATING CHARACTERISTICS (V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current Read, SO open f = 10 MHz 3 mA CCR SCK (Read Mode) I Supply Current Write, CS = V 3 mA CCW CC (Write Mode) I Standby Current V = GND or V , CS = V , WP = V , 3 A SB1 IN CC CC CC HOLD = V , V = 5.5 V CC CC I Standby Current V = GND or V , CS = V , WP = GND, 5 A SB2 IN CC CC HOLD = GND, V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V , V = GND or V 2 2 A LO CC OUT CC V Input Low Voltage 0.5 0.3V V IL CC V Input High Voltage 0.7V V + 0.5 V IH CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL OL V Output High Voltage I = 1.6 mA V 0.8V V OH OH CC www.onsemi.com 2