X-On Electronics has gained recognition as a prominent supplier of BRCB008GWZ-3E2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BRCB008GWZ-3E2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BRCB008GWZ-3E2 ROHM

BRCB008GWZ-3E2 electronic component of ROHM
BRCB008GWZ-3E2 ROHM
BRCB008GWZ-3E2 EEPROM
BRCB008GWZ-3E2  Semiconductors

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See Product Specifications
Part No. BRCB008GWZ-3E2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM CMOS Over Voltage Detector IC
Datasheet: BRCB008GWZ-3E2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4565 ea
Line Total: USD 0.46 
Availability - 5791
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5791
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4565
10 : USD 0.4466
100 : USD 0.3762
500 : USD 0.3718
1000 : USD 0.3619
2500 : USD 0.3476
6000 : USD 0.3289
24000 : USD 0.308
48000 : USD 0.3069

   
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Supply Voltage - Max
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Supply Current - Max
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We are delighted to provide the BRCB008GWZ-3E2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BRCB008GWZ-3E2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BRCB008GWZ-3 General Description 2 BRCB008GWZ-3 is a serial EEPROM of I C BUS Interface Method Features Package W (Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C BUS. UCSP30L1 0.94mm x 0.94mm x 0.33mm All controls available by 2 ports of serial clock (SCL) and serial data (SDA) 1.7V to 3.6V Single Power Source Operation most suitable for battery use 1.7V to 3.6V wide limit of operating voltage, possible FAST MODE 400KHz operation 16byte Page Write Mode useful for initial value write at factory shipment Self-timed Programming Cycle Low Current Consumption Prevention of Write Mistake at Low Voltage More than 1 million write cycles More than 40 years data retention Noise Filter Built in SCL / SDA terminal Initial delivery state FFh BRCB008GUZ-3 Capacity Bit Format Type Power Source Voltage Package 8Kbit 1K8 BRCB008GWZ-3 1.7V to 3.6V UCSP30L1 Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100250-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/25 TSZ2211114001 25.Feb.2013 Rev.002Datasheet BRCB008GWZ-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage V -0.3 to +6.5 V CC Power Dissipation Pd 220 (UCSP30L1) mW Derate by 2.2mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +125 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage / Output Voltage is not over 6.5V. Input Voltage/ -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of Input Voltage Output Voltage / Output Voltage is not lower than 1.0V. Junction Temperature Tjmax 150 C Junction temperature at the storage condition Memory Cell Characteristics (Ta=25, Vcc=1.7V to 3.6V) Limit Parameter Unit Min Typ Max (1) Write Cycles 1,000,000 - - Times (1) Data Retention 40 - - Years (1)Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage Vcc 1.7 to 3.6 V Input Voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40 to +85, Vcc=1.7V to 3.6V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage V 0.7Vcc - Vcc+1.0 V 1.7VVcc3.6V IH (2) Input Low Voltage V -0.3 - +0.3Vcc V 1.7VVcc3.6V IL Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VVcc3.6V (SDA) OL1 OL Output Low Voltage2 V - - 0.2 V I =0.7mA, 1.7VVcc2.5V (SDA) OL2 OL Input Leakage Current I -1 - +1 A V =0 to Vcc LI IN Output Leakage Current I -1 - +1 A V =0 to Vcc (SDA) LO OUT Vcc=3.6V, f =400kHz, t =5ms, SCL WR Supply Current (Write) I - - 2.0 mA CC1 Byte Write, Page Write Vcc=3.6V, f =400kHz SCL Supply Current (Read) I - - 0.5 mA Random Read, Current Read, Sequential CC2 Read Standby Current I - - 2.0 A Vcc=3.6V, SDASCL=Vcc SB (2) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100250-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/25 TSZ2211115001 25.Feb.2013 Rev.002

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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