X-On Electronics has gained recognition as a prominent supplier of BRCC064GWZ-3E2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BRCC064GWZ-3E2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BRCC064GWZ-3E2 ROHM

BRCC064GWZ-3E2 electronic component of ROHM
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Part No.BRCC064GWZ-3E2
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM Controller ICs for High Side NMOSFET
Datasheet: BRCC064GWZ-3E2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2673 ea
Line Total: USD 1.34 
Availability - 5131
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
5131
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2673
50 : USD 0.2337
150 : USD 0.2194
500 : USD 0.2015
3000 : USD 0.1935
6000 : USD 0.1887

   
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We are delighted to provide the BRCC064GWZ-3E2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BRCC064GWZ-3E2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BRCC064GWZ-3 General Description 2 BRCC064GWZ-3 is a serial EEPROM of I C BUS Interface Method Packages W(Typ) x D(Typ) x H(Max) Features 2 UCSP30L1 1.50mm x1.00mm x 0.35mm Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) Other devices than EEPROM can be connected to the same port, saving microcontroller port 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of Operating Voltage, possible FAST MODE 400KHz operation Page Write Mode useful for initial value write at factory shipment Self-timed Programming Cycle Low Current Consumption Prevention of write mistake Write (write protect) Function added Prevention of write mistake at low voltage More than 1 million write cycles More than 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh BRCC064GWZ-3 Capacity Bit Format Type Power Source Voltage Package 64Kbit 8K8 BRCC064GWZ-3 1.6V to 5.5V UCSP30L1 Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100590-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/25 TSZ22111 14 001 9.Nov.2018 Rev.003 Datasheet BRCC064GWZ-3 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage V -0.3 to +6.5 V CC 220 (UCSP30L1) Power Dissipation Pd mW Derate by 2.2mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +125 C Operating Temperature Topr -40 to +85 C The Max value of Input Voltage/Output Voltage is not over 6.5V. Input Voltage/ - -0.3 to Vcc+1.0 V When the pulse width is 50ns or less, the Min value of Input Output Voltage Voltage/Output Voltage is not below 1.0V. Junction Temperature Tjmax 150 C Junction temperature at the storage condition Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (1) Write Cycles 1,000,000 - - Times (1) Data Retention 40 - - Years (1)Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage Vcc 1.6 to 5.5 V Input Voltage VIN 0 to Vcc DC Characteristics (Unless otherwise specified, Ta=-40C to +85C, Vcc=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 V 0.7Vcc - Vcc+1.0 V 1.7V Vcc 5.5V IH1 (2) Input Low Voltage1 V -0.3 - +0.3Vcc V 1.7V Vcc 5.5V IL1 Input High Voltage2 V 0.8Vcc - Vcc+1.0 V 1.6V Vcc 1.7V IH2 (2) Input Low Voltage2 V -0.3 - +0.2Vcc V 1.6V Vcc 1.7V IL2 Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5V Vcc 5.5V (SDA) OL1 OL Output Low Voltage2 V - - 0.2 V I =0.7mA, 1.6V Vcc2.5V (SDA) OL2 OL Input Leakage Current I -1 - +1 A V =0 to Vcc LI IN Output Leakage Current I -1 - +1 A V =0 to Vcc (SDA) LO OUT Vcc=5.5V, f =400kHz, t =5ms, SCL WR Supply Current (Write) I - - 2.0 mA CC1 Byte Write, Page Write Vcc=5.5V, fSCL=400kHz Supply Current (Read) I - - 0.5 mA Random Read, current Read, Sequential Read CC2 WP=GND or Vcc Vcc=5.5V, SDA, SCL=Vcc Standby Current I - - 2.0 A SB WP=GND or Vcc, SLV=GND or Vcc (2) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100590-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/25 TSZ22111 15 001 9.Nov.2018 Rev.003

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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