BSM120D12P2C005 ROHM

10 9 8 7 6 5 SiC Power Module BSM120D12P2C005 Datasheet Application Circuit diagram Motor drive 1 Inverter, Converter 10 9 Photovoltaics, wind power generation. 8(N.C) 3,4 Induction heating equipment. 5 6 7(N.C) 2 Features *Do not connect anything to NC pin. 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOS and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) 4 1 2 3 (M2.6 FOR SELF- www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 1/9Datasheet BSM120D12P2C005 Absolute maximum ratings (Tj = 25C) Parameter Symbol Conditions Limit Unit Drain-source voltage V G-S short 1200 V DSS Gate-source voltage( ) 22 V V D-S short GSS Gate-source voltage( ) 6 V G - S voltage (t <300ns) V 10 to 26 D-S short V surge GSSsurge I 134 DC(Tc=60C) A D 1 Drain current * 2 I 240 A DRM Pulse (Tc=60C) 1ms * I DC(Tc =60C) V =18V 134 A S GS 1 Source current * *2 I 240 Pulse (Tc=60C) 1ms V =18V A SRM GS 3 Ptot Tc=25C 935 W Total power disspation * Max Junction Temperature Tjmax 175 C Junction temperature Tj 40 to150 C Storage temperature Tstg 40 to125 C Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. Main Terminals : M6 screw 4.5 N m Mounting torque Mounting to heat shink : M5 screw 3.5 N m (*1) Case temperature (Tc) is defined on the surface of base plate just under the chips. (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T jmax. (*3) T is less than 175C j Example of acceptable V waveform GS 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 2/9