BSM300C12P3E301 ROHM

SiC Power Module Datasheet BSM300C12P3E301 Application Circuit diagram Converter 1 7 9 8 3,4 6 (N .C ) Features 5 1) Low surge, low switching loss. 10 1TC 2) High-speed switching possible. 2 11 Do not connect anything to NC pin. 3) Reduced temperature dependence. Construction This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.com 1/10 22.Feb.2019 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. BSM300C12P3E301 Datasheet Absolute maximum ratings (T = 25C) j Symbol Parameter Conditions Ratings Unit V G-S short 1200 Drain - Source Voltage DSS V Repetitive Reverse Voltage Clamp diode 1200 RRM V Gate - Source Voltage (+) D-S short 22 V GSS V D-S short Gate - Source Voltage (-) -4 GSS G - S Voltage (t <300nsec) V D-S short GSSsurge -4 to 26 surge I DC(Tc=60C) VGS=18V 288 D I Drain Current DC (Tc = 50 300 D Note 1) I Pulse (Tc = 60C 1ms VGS=18V 600 DRM Note 2) I DC(Tc=60C) VGS=18V 288 S I DC(Tc=50C) VGS=18V 300 A S Source Current Note 1) I Pulse (Tc = 60C 1ms VGS=18V 600 SRM Note 2) I Pulse (Tc = 60C 10s VGS=0V SRM 600 Note 2) I DC(Tc = 60 ) 300 F Forward Current (clamp diode) Note 1) I Pulse (Tc = 60 1ms 600 FRM Note 2 Total Power Dissipation Ptot Tc = 25C 1360 W Note 3) Max Junction Temperature Tjmax 175 Tjop Junction Temperature -40 to 150 C Tstg Storage Temperature -40 to 125 Visol Terminals to baseplate f = 60Hz AC 1 min. 2500 Vrms Isolation Voltage Main Terminals : M6 screw 4.5 - Mounting Torque N m Mounting to heat sink M5 screw 3.5 Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips. Note 2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Note 3) Tj is less than 175C. Example of acceptable VGS waveform +26V t s u r g e +22V -4V www.rohm.com 22.Feb.2019 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. 2/10