X-On Electronics has gained recognition as a prominent supplier of BSS4130AHZGT116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BSS4130AHZGT116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BSS4130AHZGT116 ROHM

BSS4130AHZGT116 electronic component of ROHM
BSS4130AHZGT116 ROHM
BSS4130AHZGT116 Bipolar Transistors - BJT
BSS4130AHZGT116  Semiconductors

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See Product Specifications
Part No. BSS4130AHZGT116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 30 V 1 A 400MHz 200 mW Surface Mount SST3
Datasheet: BSS4130AHZGT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5665 ea
Line Total: USD 0.57 
Availability - 2748
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2748
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5665
10 : USD 0.3564
100 : USD 0.1848
1000 : USD 0.1683
3000 : USD 0.1386
9000 : USD 0.1276
24000 : USD 0.1265
45000 : USD 0.1221

87
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 90
Multiples : 1
90 : USD 1.2355

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS4130AHZGT116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS4130AHZGT116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BSS4130A HZG Datasheet General purpose amplification (30V, 1A) AEC-Q101 Qualified llOutline SOT-23 Parameter Value V 30V CEO I 1A C SST3 llFeatures llInner circuit 1)A collector current is large 2)Collector-Emitter saturation voltage is low. V 350mV CE(sat) at I =500mA /I =25mA C B 3)Complements the BSS5130A HZG. llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BSS4130A HZG 2924 T116 180 8 3000 K3F (SST3) www.rohm.com 1/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.BSS4130 HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 1 A C Collector current *1 I 2 A CP *2 P 200 mW D Power dissipation *3 P 350 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E V = 30V - - 100 nA CB Collector cut-off current I CBO V = 30V, T = 150 - - 50 A CB a Emitter cut-off current I V = 6V - - 100 nA EBO EB V 1 I = 100mA, I = 1mA - 90 200 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = 500mA, I = 50mA - 120 340 mV CE(sat) C B Base-emitter saturation voltage V I = 1A, I = 100mA - - 1.1 V BE(sat) C B Base-emitter turn V V = 2V, I = 100mA - - 0.75 V BE(on) CE C on voltage *4 V = 2V, I = 100mA 270 - 680 h 1 CE C FE DC current gain - *4 V = 2V, I = 1A h 2 90 - 680 CE C FE V = 2V, I = -100mA, CE E *4 Transition frequency f - 400 - MHz T f = 100MHz V = 10V, I = 0A CB E Output capacitance C - 5 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board (7.05.00.6mm). *4 Measured using pulse current. www.rohm.com 2/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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