X-On Electronics has gained recognition as a prominent supplier of BSS4130AHZGT116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BSS4130AHZGT116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BSS4130AHZGT116 ROHM

BSS4130AHZGT116 electronic component of ROHM
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Part No.BSS4130AHZGT116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 30 V 1 A 400MHz 200 mW Surface Mount SST3
Datasheet: BSS4130AHZGT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
194: USD 0.2032 ea
Line Total: USD 39.42 
Availability - 0
MOQ: 194  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3605
6000 : USD 0.3265
15000 : USD 0.3055
30000 : USD 0.2981

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2724
10 : USD 0.9899
100 : USD 0.6741
500 : USD 0.5056
1000 : USD 0.3792

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2724
10 : USD 0.9899
100 : USD 0.6741
500 : USD 0.5056
1000 : USD 0.3792

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 5
Multiples : 1
5 : USD 0.4542
10 : USD 0.4324
100 : USD 0.258
500 : USD 0.2097
1000 : USD 0.1613
5000 : USD 0.1504

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5302
10 : USD 0.3388
100 : USD 0.1793
1000 : USD 0.1639
3000 : USD 0.1364
9000 : USD 0.1276
24000 : USD 0.1265
45000 : USD 0.1221

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 194
Multiples : 1
194 : USD 0.2032
239 : USD 0.1654
500 : USD 0.1082
1000 : USD 0.108
2000 : USD 0.1058

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 193
Multiples : 1
193 : USD 0.2112
239 : USD 0.1707
500 : USD 0.1139
1000 : USD 0.1138
2000 : USD 0.1117

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS4130AHZGT116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS4130AHZGT116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BSS4130A HZG Datasheet General purpose amplification (30V, 1A) AEC-Q101 Qualified llOutline SOT-23 Parameter Value V 30V CEO I 1A C SST3 llFeatures llInner circuit 1)A collector current is large 2)Collector-Emitter saturation voltage is low. V 350mV CE(sat) at I =500mA /I =25mA C B 3)Complements the BSS5130A HZG. llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BSS4130A HZG 2924 T116 180 8 3000 K3F (SST3) www.rohm.com 1/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.BSS4130 HZG Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 30 V CBO V Collector-emitter voltage 30 V CEO V Emitter-base voltage 6 V EBO I 1 A C Collector current *1 I 2 A CP *2 P 200 mW D Power dissipation *3 P 350 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E V = 30V - - 100 nA CB Collector cut-off current I CBO V = 30V, T = 150 - - 50 A CB a Emitter cut-off current I V = 6V - - 100 nA EBO EB V 1 I = 100mA, I = 1mA - 90 200 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = 500mA, I = 50mA - 120 340 mV CE(sat) C B Base-emitter saturation voltage V I = 1A, I = 100mA - - 1.1 V BE(sat) C B Base-emitter turn V V = 2V, I = 100mA - - 0.75 V BE(on) CE C on voltage *4 V = 2V, I = 100mA 270 - 680 h 1 CE C FE DC current gain - *4 V = 2V, I = 1A h 2 90 - 680 CE C FE V = 2V, I = -100mA, CE E *4 Transition frequency f - 400 - MHz T f = 100MHz V = 10V, I = 0A CB E Output capacitance C - 5 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board (7.05.00.6mm). *4 Measured using pulse current. www.rohm.com 2/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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