X-On Electronics has gained recognition as a prominent supplier of BSM400D12P2G003 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. BSM400D12P2G003 Discrete Semiconductor Modules are a product manufactured by ROHM. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

BSM400D12P2G003 ROHM

Name: BSM400D12P2G003
Brand: ROHM
SKU: BSM400D12P2G003_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

BSM400D12P2G003 electronic component of ROHM

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See Product Specifications

Part No.	BSM400D12P2G003
Manufacturer:	ROHM
Category:	Discrete Semiconductor Modules
Description:	Discrete Semiconductor Modules SIC Pwr Module Half Bridge
Datasheet:	BSM400D12P2G003 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 3184.7567 ea
Line Total: USD 3184.76

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

BSM400D12P2G003 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 29 Nov to Thu. 05 Dec MOQ : 1 Multiples : 1	1 : USD 3184.7567

0 Ship by Wed. 27 Nov to Fri. 29 Nov MOQ : 4 Multiples : 4	4 : USD 2592.0098

Specifications

Manufacturer ROHM ROHM
Product Category Discrete Semiconductor Modules Discrete Semiconductor Modules
RoHS - XON Y Y
Product Power Mosfet Modules Power Mosfet Modules
Type Sic Power Module Sic Power Module
Vgs - Gate-Source Voltage 22 V 22 V
Mounting Style Screw Mount Screw Mount
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 150 C + 150 C
Packaging Bulk Bulk
Configuration Half - Bridge Half - Bridge
Brand Rohm Semiconductor Rohm Semiconductor
Transistor Polarity N - Channel N - Channel
Fall Time 75 ns 75 ns
Id - Continuous Drain Current 400 A 400 A
Pd - Power Dissipation 2450 W 2450 W
Product Type Discrete Semiconductor Modules Discrete Semiconductor Modules
Rise Time 50 ns 50 ns
Factory Pack Quantity : 4 4
Subcategory Discrete Semiconductor Modules Discrete Semiconductor Modules
Typical Turn-Off Delay Time 240 ns 240 ns
Typical Turn-On Delay Time 60 ns 60 ns
Vds - Drain-Source Breakdown Voltage 1200 V 1200 V
Vgs Th - Gate-Source Threshold Voltage 1.6 V 1.6 V

We are delighted to provide the BSM400D12P2G003 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM400D12P2G003 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Additional Infomation About Product

SiC Power Module Datasheet BSM400D12P2G003 Application Circuit diagram Motor drive 1 7 Inverter, Converter Photovoltaics, wind power generation. 9 8 Induction heating equipment. 3,4 Features 6 5 1) Low surge, low switching loss. 2 10 2) High-speed switching possible. NTC 11 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) D 1 S S1 G 1 TH 1 T H2 8 9 7 1 0 1 1 4 1 3 2 6 5 G2 SS 2 www.rohm.com 13.Feb.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 1/10 BSM400D12P2G003 Datasheet Absolute maximum ratings (T = 25C) j Parameter Symbol Conditions Ratings Unit V G-S short Drain - Source Voltage 1200 DSS V D-S short Gate - Source Voltage (+) GSS 22 V V D-S short -6 Gate - Source Voltage (-) GSS V G - S Voltage (t <300nsec) D-S short -10 to 26 GSSsurge surge I DC(Tc=60C) VGS=18V 397 D I Drain Current DC(Tc=59 ) VGS=18V 400 D Note 1) I Pulse (Tc = 60C 1ms VGS=18V 800 DRM Note 2) I DC(Tc=60C) VGS=18V S 418 A I DC(Tc=60C) VGS=0V 418 S Source Current Note 1) I Pulse (Tc = 60C 1ms VGS=18V 800 SRM Note 2) I Pulse (Tc = 60C 1ms VGS=0V 800 SRM Note 2) Total Power Dissipation Ptot Tc = 25C 2450 W Note 3) Tjmax Max Junction Temperature 175 Tjop Junction Temperature -40 to 150 C Tstg Storage Temperature -40 to 125 Visol Terminals to baseplate f = 60Hz AC 1 min. 2500 Vrms Isolation Voltage Main Terminals : M6 screw 4.5 - Mounting Torque N m Mounting to heat sink M5 screw 3.5 Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips. Note 2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Note 3) Tj is less than 175C. Example of acceptable VGS waveform +26V +22V 0V -6V -10V www.rohm.com 13.Feb.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2/10

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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