X-On Electronics has gained recognition as a prominent supplier of BSM400D12P3G002 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. BSM400D12P3G002 Discrete Semiconductor Modules are a product manufactured by ROHM. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

BSM400D12P3G002 ROHM

Name: BSM400D12P3G002
Brand: ROHM
SKU: BSM400D12P3G002_ROHM
Availability: InStock
Rating: 5 (11 reviews)

BSM400D12P3G002 electronic component of ROHM

BSM400D12P3G002 Discrete Semiconductor Modules

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See Product Specifications

Part No.	BSM400D12P3G002
Manufacturer:	ROHM
Category:	Discrete Semiconductor Modules
Description:	Discrete Semiconductor Modules 1200V 358A HALF BRIDGE SIC
Datasheet:	BSM400D12P3G002 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1314.7751 ea
Line Total: USD 1314.78

Availability - 3
Ship by Mon. 27 Jan to Wed. 29 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

BSM400D12P3G002 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

3

Ship by Mon. 27 Jan to Wed. 29 Jan

MOQ : 1
Multiples : 1

1 : USD 1314.7751

Specifications

Manufacturer

ROHM ROHM

Product Category

Discrete Semiconductor Modules Discrete Semiconductor Modules

Product

Power MOSFET Modules Power MOSFET Modules

Type

SiC Power MOSFET SiC Power MOSFET

Vr - Reverse Voltage

1200 V 1200 V

Vgs - Gate-Source Voltage

18 V 18 V

Mounting Style

Screw Mount Screw Mount

Package / Case

MODULE MODULE

Minimum Operating Temperature

- 40 C - 40 C

Maximum Operating Temperature

+ 150 C + 150 C

Technology

Si Si

Hts Code

8541500080 8541500080

Notes:- Show Stocked Products With Similar Attributes.

BSM400D12P3G002 Alternative Parts

We are delighted to provide the BSM400D12P3G002 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM400D12P3G002 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Additional Infomation About Product

SiC Power Module BSM400D12P3G002 Datasheet Application Circuit diagram Motor drive 1 7 Inverter, Converter Photovoltaics, wind power generation. 9 8 3,4 Induction heating equipment. 6 5 Features 2 10 NTC 1) Low surge, low switching loss. 11 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) D1 SS 1 G1 TH 1 TH 2 89 7 10 1 1 4 1 3 2 65 G2 SS2 www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.A 1/10Datasheet BSM400D12P3G002 Absolute maximum ratings (T = 25C) j Parameter Conditions Limit Symbol Unit Drain-source voltage V G-S short 1200 DSS 22 Gate-source voltage() V V GSS D-S short Gate-source voltage() 4 G - S Voltage (t <300nsec) V 4 to 26 surge GSSsurge I DC (T =60C) V =18V 358 D c GS 1 DC (T =32C) V =18V I 400 Drain current * D c GS 2 I Pulse (T =60C) 1ms V =18V * 800 DRM c GS I DC (T =60C ) V =18V 358 S c GS A I DC (T =32C ) V =18V 400 S c GS 1 I DC (T =60C ) V =0V 260 Source current * S c GS 2 I 800 Pulse (Tc=60C) 1ms V =18V * SRM GS 2 I 800 Pulse (Tc=60C) 10s V =0V * SRM GS 3 T =25C 1570 Ptot W Total power disspation * c T Max Junction Temperature 175 jmax Junction temperature T 40 to150 C jop Storage temperature T 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. 4.5 Main Terminals : M6 screw Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) T is less than 175C j Example of acceptable V waveform GS +26V t surge +22V -4V www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.A 2/10

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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