BSM400D12P3G002 ROHM

SiC Power Module BSM400D12P3G002 Datasheet Application Circuit diagram Motor drive 1 7 Inverter, Converter Photovoltaics, wind power generation. 9 8 3,4 Induction heating equipment. 6 5 Features 2 10 NTC 1) Low surge, low switching loss. 11 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) D1 SS 1 G1 TH 1 TH 2 89 7 10 1 1 4 1 3 2 65 G2 SS2 www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.A 1/10Datasheet BSM400D12P3G002 Absolute maximum ratings (T = 25C) j Parameter Conditions Limit Symbol Unit Drain-source voltage V G-S short 1200 DSS 22 Gate-source voltage() V V GSS D-S short Gate-source voltage() 4 G - S Voltage (t <300nsec) V 4 to 26 surge GSSsurge I DC (T =60C) V =18V 358 D c GS 1 DC (T =32C) V =18V I 400 Drain current * D c GS 2 I Pulse (T =60C) 1ms V =18V * 800 DRM c GS I DC (T =60C ) V =18V 358 S c GS A I DC (T =32C ) V =18V 400 S c GS 1 I DC (T =60C ) V =0V 260 Source current * S c GS 2 I 800 Pulse (Tc=60C) 1ms V =18V * SRM GS 2 I 800 Pulse (Tc=60C) 10s V =0V * SRM GS 3 T =25C 1570 Ptot W Total power disspation * c T Max Junction Temperature 175 jmax Junction temperature T 40 to150 C jop Storage temperature T 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. 4.5 Main Terminals : M6 screw Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) T is less than 175C j Example of acceptable V waveform GS +26V t surge +22V -4V www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.A 2/10