X-On Electronics has gained recognition as a prominent supplier of BSS5130AT116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BSS5130AT116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BSS5130AT116 ROHM

BSS5130AT116 electronic component of ROHM
BSS5130AT116 ROHM
BSS5130AT116 Bipolar Transistors - BJT
BSS5130AT116  Semiconductors

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See Product Specifications
Part No. BSS5130AT116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT TRANSISTOR FOR LOW FREQ AMPLIF
Datasheet: BSS5130AT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5913 ea
Line Total: USD 0.59 
Availability - 2870
Ship by Thu. 30 Jan to Mon. 03 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2870
Ship by Thu. 30 Jan to Mon. 03 Feb
MOQ : 1
Multiples : 1
1 : USD 0.5913
10 : USD 0.3712
100 : USD 0.1776
1000 : USD 0.1529
3000 : USD 0.1133
9000 : USD 0.1067
45000 : USD 0.1012

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS5130AT116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS5130AT116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BSS5130A Datasheet General purpose amplification (-30V, -1A) llOutline SOT-23 Parameter Value V -30V CEO I -1A C SST3 llFeatures llInner circuit 1)A collector current is large 2)Collector-Emitter saturation voltage is low. VCE(sat)-380mV at I =-500mA/I =-25mA C B 3)Complements the BSS4130A. llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BSS5130A 2924 T116 180 8 3000 K4N (SST3) www.rohm.com 1/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.SST3 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -6 V EBO I -1 A C Collector current *1 I -2 A CP *2 P 200 mW D Power dissipation *3 P 350 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E V = -30V - - -100 nA CB Collector cut-off current I CBO V = -30V, T = 150 - - -50 A CB a Emitter cut-off current I V = -6V - - -100 nA EBO EB V 1 I = -100mA, I = -1mA - -100 -220 mV CE(sat) C B Collector-emitter saturation voltage V 2 I = -500mA, I = -25mA - -180 -380 mV CE(sat) C B Base-emitter saturation voltage V I = -1A, I = -100mA - - -1.1 V BE(sat) C B Base-emitter turn *4 V = -2V, I = -100mA V - - -0.75 V CE C BE(on) on voltage *4 V = -2V, I = -100mA 270 - 680 h 1 CE C FE DC current gain - *4 V = -2V, I = -1A h 2 90 - 680 CE C FE V = -2V, I = 100mA, CE E *4 Transition frequency f - 320 - MHz T f = 100MHz V = -10V, I = 0A CB E Output capacitance C - 7 - pF ob f = 1MHz *1 Pw=1ms, Single Pulse. *2 Each terminal mounted on a reference land. *3 Mounted on ceramic board (7.05.00.6mm). *4Measured using pulse current. www.rohm.com 2/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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