X-On Electronics has gained recognition as a prominent supplier of BSS64AT116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BSS64AT116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BSS64AT116 ROHM

BSS64AT116 electronic component of ROHM
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See Product Specifications
Part No.BSS64AT116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT TRANSISTOR FOR HIGH VOLT AMP
Datasheet: BSS64AT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.363 ea
Line Total: USD 0.36 
Availability - 5099
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 BSS64AT116 More Buying Options & Price Grid(s)

Availability Price Quantity
5099
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.363
10 : USD 0.2178
100 : USD 0.1045
1000 : USD 0.0924
3000 : USD 0.0704
9000 : USD 0.0506
24000 : USD 0.0484
45000 : USD 0.044

2846
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 575
Multiples : 1
575 : USD 0.2471

388
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 282
Multiples : 1
282 : USD 0.1445

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1389
Multiples : 1
1389 : USD 0.2803

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS64AT116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS64AT116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

BSS64A Datasheet High-voltage Amplifier Transistor (100V, 100mA) llOutline SOT-23 Parameter Value V 100V CEO I 100mA C SST3 llFeatures llInner circuit 1)High breakdown voltage. (BV =100V) CEO 2)Complements the BSS63A. llApplication HIGH VOLTAGE AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 BSS64A 2924 T116 180 8 3000 K9F (SST3) www.rohm.com 1/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved. Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 120 V CBO V Collector-emitter voltage 100 V CEO V Emitter-base voltage 6 V EBO I 100 mA C Collector current *1 I 200 mA CP *2 P 200 mW D Power dissipation *3 P 350 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 120 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 100 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 6 - - V EBO E V = 90V - - 100 nA CB I Collector cut-off current CBO V = 90V, T = 150 - - 50 A CB a I Emitter cut-off current V = 6V - - 100 nA EBO EB V 1 I = 25mA, I = 2.5mA - 80 210 mV CE(sat) C B Collector-emitter saturation voltage V 2 CE(sat) I = 100mA, I = 10mA - 160 300 mV C B Base-emitter saturation voltage V I = 25mA, I = 2.5mA - 770 900 mV BE(sat) C B Base-emitter turn V V = 6V, I = 1mA 580 - 800 mV BE(on) CE C on voltage h 1 V = 1V, I = 10mA 30 - - FE CE C DC current gain - h 2 V = 1V, I = 25mA 30 - - FE CE C V = 5V, I = -1mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = 10V, I = 0A CB E C Output capacitance - 2.5 4.0 pF ob f = 1MHz *1 Pw=10ms,Single pulse. *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board (7.05.00.6mm). www.rohm.com 2/6 20190410 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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