X-On Electronics has gained recognition as a prominent supplier of BSM120C12P2C201 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. BSM120C12P2C201 Discrete Semiconductor Modules are a product manufactured by ROHM. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

BSM120C12P2C201 ROHM

Name: BSM120C12P2C201
Brand: ROHM
SKU: BSM120C12P2C201_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

BSM120C12P2C201 electronic component of ROHM

BSM120C12P2C201 Discrete Semiconductor Modules

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Part No.	BSM120C12P2C201
Manufacturer:	ROHM
Category:	Discrete Semiconductor Modules
Description:	Mosfet Array 2 N-Channel 1200V (1.2kV) 134A (Tc) 935W (Tc) Chassis Mount Module
Datasheet:	BSM120C12P2C201 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 513.7405 ea
Line Total: USD 513.74

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

BSM120C12P2C201 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 1 Multiples : 1	1 : USD 326.655

0 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 1 Multiples : 1	1 : USD 513.7405

0 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 12 Multiples : 12	12 : USD 377.014

We are delighted to provide the BSM120C12P2C201 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM120C12P2C201 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Additional Infomation About Product

10 9 8 7 6 5 SiC Power Module BSM120C12P2C201 Datasheet Application Circuit diagram Motor drive 1 Converter 10 (N .C ) Photovoltaics, wind power generation. 9 8(N.C) 3,4 Features 5 6 7(N.C) 1) Low surge, low switching loss. 2 2) High-speed switching possible. *Do not connect anything to NC pin. 3) Reduced temperature dependence. Construction This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) 4 1 2 3 www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 1/10Datasheet BSM120C12P2C201 Absolute maximum ratings (T = 25C) j Parameter Conditions Limit Symbol Unit Drain-source voltage V G-S short 1200 DSS V 1200 Repetitive reverse voltage Clamp diode DSS Gate-source voltage() 22 V V D-S short GSS Gate-source voltage() 6 <300ns) V G - S Voltage (t D-S short 10 to 26 GSS surge surge I DC (T =60C) 134 D c 1 2 I 240 Drain current * DRM Pulse (T =60C) 1ms * c 2 I 360 Pulse (T =60C) 10us * DRM c I DC (T =60C ) V =18V 134 S c GS 1 2 I 240 A Source current * Pulse (Tc=60C) 1ms V =18V* SRM GS 2 I 360 Pulse (Tc=60C) 10us V =18V* SRM GS I DC (T =60C ) V =18V 134 F c GS 2 1 I 240 Pulse (Tc=60C) 1ms V =18V* Forward curent (clamp diode) * FRM GS 2 I 360 Pulse (Tc=60C) 10us V =18V* FRM GS 4 T =25C 935 Ptot W Total power disspation * c Max Junction Temperature T 175 jmax Junction temperature T C 40 to150 jop Storage temperature T 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. 4.5 Main Terminals : M6 screw Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) T is less than 175C j Example of acceptable V waveform GS 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 2/10

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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