BSM180D12P3C007 ROHM

10 9 8 7 6 5 SiC Power Module BSM180D12P3C007 Datasheet Application Circuit diagram Motor drive 1 Inverter, Converter 10 Photovoltaics, wind power generation. 9 8(N.C) 3,4 Induction heating equipment. 5 6 7(N.C) Features 2 *Do not connnect to NC pin. 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) 4 1 2 3 (M2.6 FOR SELF-TAPPING SCREW) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 20.Aug.2019 - Rev.002 1/10Datasheet BSM180D12P3C007 Absolute maximum ratings (T = 25C) j Parameter Conditions Limit Symbol Unit Drain-source voltage V G-S short 1200 DSS 22 Gate-source voltage() V V GSS Gate-source voltage() D-S short 4 G - S Voltage (t <300ns) V -4 to 26 surge GSSsurge I DC (T =60C) 180 D c 1 Drain current * 2 I 360 Pulse (T =60C) 1ms * DRM c I DC (T =60C) V =18V 180 A S c GS 1 2 360 Source current * Pulse (T =60C) 1ms V =18V* c GS I SRM 2 Pulse (T =60C) 10s V =0V * 360 c GS 3 Ptot T =25C 880 W Total power disspation * c T 175 Max Junction Temperature jmax Junction temperature T 40 to150 C jop Storage temperature T 40 to125 stg Terminals to baseplate, 4 Visol 2500 Vrms Isolation voltage * f=60Hz AC 1min. Main Terminals : M6 screw 4.5 Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T jmax. (*3) T is less than 175C j Example of acceptable V waveform GS +26V tsurge +22V -4V www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 20.Aug.2019 - Rev.002 2/10