X-On Electronics has gained recognition as a prominent supplier of BSM300D12P2E001 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. BSM300D12P2E001 Discrete Semiconductor Modules are a product manufactured by ROHM. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

BSM300D12P2E001 ROHM

BSM300D12P2E001 electronic component of ROHM
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Part No.BSM300D12P2E001
Manufacturer: ROHM
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 300A SiC Power Module
Datasheet: BSM300D12P2E001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 779.152 ea
Line Total: USD 779.15 
Availability - 22
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 BSM300D12P2E001 More Buying Options & Price Grid(s)

Availability Price Quantity
22
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 779.152

38
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 1175.7951
2 : USD 1143.3522
3 : USD 1115.1339
5 : USD 1090.4522
10 : USD 1068.7581
20 : USD 1049.6077

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Type
Vgs - Gate-Source Voltage
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Configuration
Brand
Id - Continuous Drain Current
Pd - Power Dissipation
Factory Pack Quantity :
Vds - Drain-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
Height
Length
Width
Number Of Channels
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSM300D12P2E001 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM300D12P2E001 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Additional Infomation About Product

SiC Power Module BSM300D12P2E001 Datasheet Application Circuit diagram Motor drive 1 7 Inverter, Converter 9 Photovoltaics, wind power generation. 8 3, 4 Induction heating equipment. 6 5 2 10 Features NTC 11 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.02 - Rev.C 1/9Datasheet BSM300D12P2E001 Absolute maximum ratings (T = 25C) j Parameter Conditions Limit Symbol Unit Drain-source voltage V G-S short 1200 DSS 22 Gate-source voltage() V D-S short V GSS Gate-source voltage() 6 G - S Voltage (t <300nsec) V D-S short 10 to 26 surge GSS surge I DC (T =60C) 300 D c 1 Drain current * 2 I 600 Pulse (T =60C) 1ms * DRM c A I DC (T =60C ) 300 S c 1 Source current * 2 I 600 Pulse (Tc=60C) 1ms * SRM 3 T =25C Ptot 1875 W Total power disspation * c T 175 Max Junction Temperature jmax Operating junction temperature T 40 to150 C jop Storage temperature T 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. 4.5 Main Terminals : M6 screw Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) T is less than 175C j Example of acceptable V waveform GS 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2018.02 - Rev.C 2/9

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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