X-On Electronics has gained recognition as a prominent supplier of BSM400C12P3G202 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. BSM400C12P3G202 Discrete Semiconductor Modules are a product manufactured by ROHM. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

BSM400C12P3G202 ROHM

BSM400C12P3G202 electronic component of ROHM
BSM400C12P3G202 ROHM
BSM400C12P3G202 Discrete Semiconductor Modules
BSM400C12P3G202 Semiconductors

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See Product Specifications
Part No. BSM400C12P3G202
Manufacturer: ROHM
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 1200V Vdss; 358A ID SiC Mod; SICSTD02
Datasheet: BSM400C12P3G202 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 966.284 ea
Line Total: USD 966.28 
Availability - 3
Ship by Thu. 30 Jan to Mon. 03 Feb
MOQ: 1  Multiples: 1
Pack Size: 1

 BSM400C12P3G202 More Buying Options & Price Grid(s)

Availability Price Quantity
3
Ship by Thu. 30 Jan to Mon. 03 Feb
MOQ : 1
Multiples : 1
1 : USD 966.284

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Type
Vf - Forward Voltage
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Technology
Configuration
Brand
Transistor Polarity
Typical Delay Time
Fall Time
Id - Continuous Drain Current
Pd - Power Dissipation
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Vds - Drain-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSM400C12P3G202 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM400C12P3G202 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Additional Infomation About Product

SiC Power Module Datasheet BSM400C12P3G202 Application Circuit diagram 1 Motor drive 7 Converter Photovoltaics, wind power generation. 9 ( N. C ) 8 3, 4 Features 6 5 10 1) Low surge, low switching loss. 1TC 11 2) High-speed switching possible. 2 Do not connect anything to NC pin. 3) Reduced temperature dependence. Construction This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) D1 SS 1 G 1 TH1 TH2 8 9 7 10 1 1 4 1 3 2 6 5 G 2 S S2 www.rohm.com 1/10 30.Mar.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. BSM400C12P3G202 Datasheet Absolute maximum ratings (T = 25C) j Symbol Parameter Conditions Ratings Unit V G-S short 1200 Drain - Source Voltage DSS V Repetitive Reverse Voltage Clamp diode 1200 RRM V Gate - Source Voltage (+) D-S short 22 V GSS V D-S short Gate - Source Voltage (-) -4 GSS G - S Voltage (t <300nsec) V D-S short GSSsurge -4 to 26 surge I DC(Tc=60C) VGS=18V 358 D I Drain Current DC(Tc=32 ) VGS=18V 400 D Note 1) I Pulse (Tc = 60C 1ms VGS=18V 800 DRM Note 2) I DC(Tc=60C) VGS=18V 358 S I DC(Tc=32C) VGS=18V 400 A S Source Current Note 1) I Pulse (Tc = 60C 1ms VGS=18V 800 SRM Note 2) I Pulse (Tc = 60C 10us VGS=0V SRM Note 2) 800 I DC(Tc = 60) 400 F Forward Current (clamp diode) Note 1) I Pulse (Tc = 60 1ms 800 FRM Note 2 Total Power Dissipation Ptot Tc = 25C 1570 W Note 3) Max Junction Temperature Tjmax 175 Tjop Junction Temperature -40 to 150 C Tstg Storage Temperature -40 to 125 Visol Terminals to baseplate f = 60Hz AC 1 min. 2500 Vrms Isolation Voltage Main Terminals : M6 screw 4.5 - Mounting Torque N m Mounting to heat sink M5 screw 3.5 Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips. Note 2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Note 3) Tj is less than 175C. Example of acceptable VGS waveform +26V t s u r g e +22V -4V www.rohm.com 30.Mar.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2/10

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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