SiC Power Module Datasheet BSM400C12P3G202 Application Circuit diagram 1 Motor drive 7 Converter Photovoltaics, wind power generation. 9 ( N. C ) 8 3, 4 Features 6 5 10 1) Low surge, low switching loss. 1TC 11 2) High-speed switching possible. 2 Do not connect anything to NC pin. 3) Reduced temperature dependence. Construction This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) D1 SS 1 G 1 TH1 TH2 8 9 7 10 1 1 4 1 3 2 6 5 G 2 S S2 www.rohm.com 1/10 30.Mar.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. BSM400C12P3G202 Datasheet Absolute maximum ratings (T = 25C) j Symbol Parameter Conditions Ratings Unit V G-S short 1200 Drain - Source Voltage DSS V Repetitive Reverse Voltage Clamp diode 1200 RRM V Gate - Source Voltage (+) D-S short 22 V GSS V D-S short Gate - Source Voltage (-) -4 GSS G - S Voltage (t <300nsec) V D-S short GSSsurge -4 to 26 surge I DC(Tc=60C) VGS=18V 358 D I Drain Current DC(Tc=32 ) VGS=18V 400 D Note 1) I Pulse (Tc = 60C 1ms VGS=18V 800 DRM Note 2) I DC(Tc=60C) VGS=18V 358 S I DC(Tc=32C) VGS=18V 400 A S Source Current Note 1) I Pulse (Tc = 60C 1ms VGS=18V 800 SRM Note 2) I Pulse (Tc = 60C 10us VGS=0V SRM Note 2) 800 I DC(Tc = 60) 400 F Forward Current (clamp diode) Note 1) I Pulse (Tc = 60 1ms 800 FRM Note 2 Total Power Dissipation Ptot Tc = 25C 1570 W Note 3) Max Junction Temperature Tjmax 175 Tjop Junction Temperature -40 to 150 C Tstg Storage Temperature -40 to 125 Visol Terminals to baseplate f = 60Hz AC 1 min. 2500 Vrms Isolation Voltage Main Terminals : M6 screw 4.5 - Mounting Torque N m Mounting to heat sink M5 screw 3.5 Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips. Note 2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax. Note 3) Tj is less than 175C. Example of acceptable VGS waveform +26V t s u r g e +22V -4V www.rohm.com 30.Mar.2018 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. 2/10