X-On Electronics has gained recognition as a prominent supplier of IXTY01N100D-TRL Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. IXTY01N100D-TRL Discrete Semiconductor Modules are a product manufactured by IXYS. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

IXTY01N100D-TRL IXYS

IXTY01N100D-TRL electronic component of IXYS
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See Product Specifications
Part No.IXTY01N100D-TRL
Manufacturer: IXYS
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules IXTY01N100D TRL
Datasheet: IXTY01N100D-TRL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.0778 ea
Line Total: USD 8.08 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 8.0778
10 : USD 2.9101
25 : USD 2.7547
100 : USD 2.3923
500 : USD 2.0298
1000 : USD 1.7295
2500 : USD 1.7191

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Type
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Configuration
Brand
Transistor Polarity
Fall Time
Id - Continuous Drain Current
Pd - Power Dissipation
Product Type
Rds On - Drain-Source Resistance
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Vds - Drain-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the IXTY01N100D-TRL from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTY01N100D-TRL and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Depletion Mode V = 1000V IXTY01N100D DSX MOSFET IXTU01N100D R 80 DS(on) IXTP01N100D D N-Channel TO-252 (IXTY) G G S S D (Tab) Symbol Test Conditions Maximum Ratings TO-251 (IXTU) V T = 25 C to 150 C 1000 V DSX J V T = 25 C to 150 C 1000 V DGX J G V Continuous 20 V GSX D V Transient 30 V S D (Tab) GSM I T = 25 C, Pulse Width Limited by T 400 mA DM C J TO-220 (IXTP) P T = 25 C 25 W D C T = 25 C 1.1 W A T - 55 ... +150 C J T 150 C G JM D T - 55 ... +150 C stg S D (Tab) T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD G = Gate D = Drain S = Source Tab = Drain M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d Weight TO-252 0.35 g TO-251 0.40 g TO-220 3.00 g Features Normally ON Mode International Standard Packages TM Low R HDMOS Process Symbol Test Conditions Characteristic Values DS(on) Rugged Polysilicon Gate Cell Structure (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Fast Switching Speed BV V = -10V, I = 25 A 1000 V DSX GS D Advantages V V = 25V, I = 25 A - 2.0 - 4.5 V GS(off) DS D Easy to Mount I V = 20V, V = 0V 100 nA GSX GS DS Space Savings I V = V , V = -10V 10 A High Power Density DSX(off) DS DSX GS T = 125C 250A J Applications R V = 0V, I = 50mA, Note 1 50 80 DS(on) GS D Level Shifting I V = 0V, V = 25V, Note 1 400 mA D(on) GS DS Triggers Solid State Relays Current Regulators 2019 IXYS CORPORATION, All Rights Reserved DS98809F(5/19)IXTY01N100D IXTU01N100D IXTP01N100D Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 100V, I = 100mA, Note 1 100 200 mS fs DS D C 100 pF iss C V = -10V, V = 25V, f = 1MHz 12 pF oss GS DS C 2 pF rss t 7 ns d(on) Resistive Switching Times t 10 ns r V = 5V, V = 50V, I = 50mA GS DS D t 34 ns d(off) R = 30 (External) G t 64 ns f Q 5.8 nC g(on) Q V = 5V, V = 500V, I = 50mA 3.6 nC gs GS DS D Q 0.4 nC gd R 5.0 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 100mA, V = -10V, Note 1 1.5 V SD F GS I = 750mA, -di/dt = 100A/ s t F 1.5 s rr V = 25V, V = -10V R GS Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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