Depletion Mode V = 1000V IXTY01N100D DSX MOSFET IXTU01N100D R 80 DS(on) IXTP01N100D D N-Channel TO-252 (IXTY) G G S S D (Tab) Symbol Test Conditions Maximum Ratings TO-251 (IXTU) V T = 25 C to 150 C 1000 V DSX J V T = 25 C to 150 C 1000 V DGX J G V Continuous 20 V GSX D V Transient 30 V S D (Tab) GSM I T = 25 C, Pulse Width Limited by T 400 mA DM C J TO-220 (IXTP) P T = 25 C 25 W D C T = 25 C 1.1 W A T - 55 ... +150 C J T 150 C G JM D T - 55 ... +150 C stg S D (Tab) T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD G = Gate D = Drain S = Source Tab = Drain M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d Weight TO-252 0.35 g TO-251 0.40 g TO-220 3.00 g Features Normally ON Mode International Standard Packages TM Low R HDMOS Process Symbol Test Conditions Characteristic Values DS(on) Rugged Polysilicon Gate Cell Structure (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Fast Switching Speed BV V = -10V, I = 25 A 1000 V DSX GS D Advantages V V = 25V, I = 25 A - 2.0 - 4.5 V GS(off) DS D Easy to Mount I V = 20V, V = 0V 100 nA GSX GS DS Space Savings I V = V , V = -10V 10 A High Power Density DSX(off) DS DSX GS T = 125C 250A J Applications R V = 0V, I = 50mA, Note 1 50 80 DS(on) GS D Level Shifting I V = 0V, V = 25V, Note 1 400 mA D(on) GS DS Triggers Solid State Relays Current Regulators 2019 IXYS CORPORATION, All Rights Reserved DS98809F(5/19)IXTY01N100D IXTU01N100D IXTP01N100D Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 100V, I = 100mA, Note 1 100 200 mS fs DS D C 100 pF iss C V = -10V, V = 25V, f = 1MHz 12 pF oss GS DS C 2 pF rss t 7 ns d(on) Resistive Switching Times t 10 ns r V = 5V, V = 50V, I = 50mA GS DS D t 34 ns d(off) R = 30 (External) G t 64 ns f Q 5.8 nC g(on) Q V = 5V, V = 500V, I = 50mA 3.6 nC gs GS DS D Q 0.4 nC gd R 5.0 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 100mA, V = -10V, Note 1 1.5 V SD F GS I = 750mA, -di/dt = 100A/ s t F 1.5 s rr V = 25V, V = -10V R GS Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537