Preliminary Technical Information TM TrenchP V = -100V IXTN210P10T DSS Power MOSFET I = - 210A D25 R 7.5m DS(on) D t 200ns rr P-Channel Enhancement Mode G Avalanche Rated S Fast Intrinsic Rectifier miniBLOC S E153432 S G Symbol Test Conditions Maximum Ratings S V T = 25C to 150C -100 V DSS J D V T = 25C to 150C, R = 1M -100 V DGR J GS V Continuous 15 V GSS G = Gate D = Drain S = Source V Transient 25 V GSM I T = 25C (Chip Capability) - 210 A Either Source Terminal S can be used as D25 C the Source Terminal or the Kelvin Source I Lead Current Limit, RMS - 200 A LRMS (Gate Return) Terminal. I T = 25C, Pulse Width Limited by T - 800 A DM C JM I T = 25C -100 A A C E T = 25C3J AS C Features dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J z International Standard Package P T = 25C 830 W z D C Low Intrinsic Gate Resistance z miniBLOC with Aluminum Nitride T - 55 ... +150 C J Isolation T 150 C JM z Avalanche Rated T - 55 ... +150 C stg z Extended FBSOA z V 50/60 Hz, RMS, t = 1minute 2500 V~ Fast Intrinsic Recitifier ISOL z I 1mA, t = 1s 3000 V~ Low R and Q ISOL DS(ON) G M Mounting Torque for Base Plate 1.5/13 Nm/lb.in. d Terminal Connection Torque 1.3/11.5 Nm/lb.in. Advantages Weight 30 g z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250A -100 V DSS GS D z High-Side Switching V V = V , I = - 250A - 2.5 - 4.5 V GS(th) DS GS D z Push Pull Amplifiers z DC Choppers I V = 15V, V = 0V 200 nA GSS GS DS z Automatic Test Equipment I V = V , V = 0V - 25 A z DSS DS DSS GS Current Regulators T = 125C - 300 A z J Battery Charger Applications R V = -10V, I = 0.5 I , Note 1 7.5 m DS(on) GS D D25 2011 IXYS CORPORATION, All Rights Reserved DS100408A(01/13)IXTN210P10T Symbol Test Conditions Characteristic Values SOT-227B (IXTN) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = - 60A, Note 1 90 150 S fs DS D C 69.5 nF iss C V = 0V, V = - 25V, f = 1MHz 4070 pF oss GS DS C 1100 pF rss t 90 ns d(on) Resistive Switching Times t 98 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 165 ns d(off) R = 1 (External) G t 55 ns f (M4 screws (4x) supplied) Q 740 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 200 nC gs GS DS DSS D D25 Q 155 nC gd R 0.15 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 210 A S GS I Repetitive, Pulse Width Limited by T - 840 A SM JM V I = -100A, V = 0V, Note 1 -1.4 V SD F GS t 200 ns rr I = -105A, -di/dt = -100A/s F Q 930 nC RM V = -100V, V = 0V R GS I -12.4 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537