Product Information

BSM180D12P2C101

Hot BSM180D12P2C101 electronic component of ROHM

Datasheet
ROHM Semiconductor Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 403 ea
Line Total: USD 403

6 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 525.481
12 : USD 522.5025
24 : USD 506.2185
60 : USD 505.264

9 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 765.6363
2 : USD 738.1837
3 : USD 714.9405
5 : USD 695.0959
10 : USD 678.0319

6 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 403
5 : USD 380.25

     
Manufacturer
Product Category
Product
Type
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
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Hts Code
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10 9 8 7 6 5 SiC Power Module BSM180D12P2C101 Datasheet Application Circuit diagram Motor drive 1 Inverter, Converter 10 Photovoltaics, wind power generation. 9 8(N.C) 3,4 Induction heating equipment. 5 6 7(N.C) Features 2 *Do not connnect to NC pin. 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOS from ROHM. Dimensions & Pin layout (Unit : mm) 4 1 2 3 www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 21.Aug.2019 - Rev.002 1/9Datasheet BSM180D12P2C101 Absolute maximum ratings (Tj = 25C) Parameter Conditions Limit Symbol Unit Drain-source voltage V G-S short 1200 V DSS 22 Gate-source voltage() D-S short V V GSS Gate-source voltage() D-S short 6 V G - S Voltage (tsurge<300ns) V D-S short 10 to 26 C GSSsurge I DC(Tc=60C) 204 A D 1 Drain current * 2 I 360 A DRM Pulse (Tc=60C) 1ms * I Tc=60C V =18V 204 A S GS 1 2 360 Source current * Pulse (Tc=60C) 1ms V =18V * A GS I SRM 2 Pulse (Tc=60C) 10 s V =0V * 360 A GS 3 Ptot Tc=25C 1360 W Total power disspation * 175 Max Junction Temperature Tjmax C Junction Temperature Tjop 40 to 150 C Storage temperature Tstg 40 to 125 C Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. Main Terminals : M6 screw 4.5 N m Mounting torque Mounting to heat shink : M5 screw 3.5 N m (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T jmax. (*3) T is less than 175C j Example of acceptable V waveform GS 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 21.Aug.2019 - Rev.002 2/9

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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