X-On Electronics has gained recognition as a prominent supplier of BSM180D12P2E002 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. BSM180D12P2E002 Discrete Semiconductor Modules are a product manufactured by ROHM. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

BSM180D12P2E002 ROHM

BSM180D12P2E002 electronic component of ROHM
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Part No.BSM180D12P2E002
Manufacturer: ROHM
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 1200V 204A HALF BRIDGE SIC
Datasheet: BSM180D12P2E002 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 731.676 ea
Line Total: USD 731.68 
Availability - 1
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 731.676
12 : USD 731.665

   
Manufacturer
Product Category
Product
Type
Vr - Reverse Voltage
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
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We are delighted to provide the BSM180D12P2E002 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM180D12P2E002 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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SiC Power Module BSM180D12P2E002 Datasheet Application Circuit diagram Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Features 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.02 - Rev.C 1/10Datasheet BSM180D12P2E002 Absolute maximum ratings (T = 25C) j Parameter Conditions Limit Symbol Unit Drain-source voltage V G-S short 1200 DSS 22 Gate-source voltage() V D-S short V GSS Gate-source voltage() 6 G - S Voltage (t <300nsec) V D-S short 10 to 26 surge GSS surge I DC (T =60C) 204 D c 1 2 I 360 Drain current * Pulse (T =60C) 1ms * DRM c 2 I 540 DRM Pulse (T =60C) 10us * c A I DC (T =60C ) V =18V 204 S c GS 1 2 I Pulse (Tc=60C) 1ms V =18V* 360 Source current * SRM GS 2 I 540 Pulse (Tc=60C) 10us V =18V* SRM GS 3 T =25C 1360 Ptot W Total power disspation * c Max Junction Temperature T 175 jmax Operating junction temperature T C 40 to150 jop Storage temperature T 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. 4.5 Main Terminals : M6 screw Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) T is less than 175C j Example of acceptable V waveform GS 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2018.02 - Rev.C 2/10

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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