BSM180C12P2E202 ROHM

SiC Power Module BSM180C12P2E202 Datasheet Application Circuit diagram Converter Photovoltaics, wind power generation. Induction heating equipment. Features 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.11 - Rev.A 1/10Datasheet BSM180C12P2E202 Absolute maximum ratings (T = 25C) j Parameter Symbol Conditions Limit Unit Drain-source voltage V 1200 G-S short DSS V Repetitive reverse voltage Clamp diode 1200 DSS Gate-source voltage() 22 V V D-S short GSS Gate-source voltage() 6 G - S Voltage (t <300nsec) V D-S short 10 to 26 GSS surge surge I DC (T =60C) 204 D c 1 2 I Pulse (T =60C) 1ms * 360 Drain current * DRM c 2 3 I 540 Pulse (T =60C) 10us * * DRM c I DC (T =60C ) V =18V 204 S c GS 2 1 I Pulse (Tc=60C) 1ms V =18V* 360 A Source current * SRM GS 2 3 I 540 Pulse (Tc=60C) 10us V =18V* * SRM GS I DC (T =60C ) 204 F c 1 2 I 360 Forward current (clamp diode) * Pulse (Tc=60C) 1ms * FRM 2 3 I 540 Pulse (Tc=60C) 10us * * FRM 3 Ptot T =25C 1360 W Total power dissipation * c T 175 Max Junction Temperature jmax Operating junction temperature T 40 to150 C jop Storage temperature T 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. 4.5 Main Terminals : M6 screw Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) Please use an appropriate external gate resistor not to exceed maximum ratings of Drain - Source Voltage. (*4) T is less than 175C j Example of acceptable V waveform GS 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.11 - Rev.A 2/10