X-On Electronics has gained recognition as a prominent supplier of BSM180C12P2E202 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. BSM180C12P2E202 Discrete Semiconductor Modules are a product manufactured by ROHM. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

BSM180C12P2E202 ROHM

Name: BSM180C12P2E202
Brand: ROHM
SKU: BSM180C12P2E202_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

BSM180C12P2E202 electronic component of ROHM

BSM180C12P2E202 Discrete Semiconductor Modules

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Part No.	BSM180C12P2E202
Manufacturer:	ROHM
Category:	Discrete Semiconductor Modules
Description:	Discrete Semiconductor Modules 1200V Vdss; 204A ID SiC Mod; SICSTD02
Datasheet:	BSM180C12P2E202 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 795.345 ea
Line Total: USD 795.34

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

BSM180C12P2E202 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 11 Apr to Thu. 17 Apr MOQ : 1 Multiples : 1	1 : USD 795.345

0 Ship by Wed. 09 Apr to Fri. 11 Apr MOQ : 1 Multiples : 1	1 : USD 704.9828 4 : USD 680.7039

Specifications

Manufacturer ROHM ROHM
Product Category Discrete Semiconductor Modules Discrete Semiconductor Modules
RoHS - XON Y Y
Product Igbt Silicon Carbide Modules Igbt Silicon Carbide Modules
Mounting Style Screw Screw
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 150 C + 150 C
Packaging Tray Tray
Technology Sic Sic
Configuration Single Single
Brand ROHM ROHM
Hts Code 8541290095 8541290095
Pd - Power Dissipation 1360 W 1360 W
Product Type Igbt Modules Igbt Modules
Factory Pack Quantity : 4 4
Subcategory Igbts Igbts

We are delighted to provide the BSM180C12P2E202 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM180C12P2E202 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Additional Infomation About Product

SiC Power Module BSM180C12P2E202 Datasheet Application Circuit diagram Converter Photovoltaics, wind power generation. Induction heating equipment. Features 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM. Dimensions & Pin layout (Unit : mm) www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.11 - Rev.A 1/10Datasheet BSM180C12P2E202 Absolute maximum ratings (T = 25C) j Parameter Symbol Conditions Limit Unit Drain-source voltage V 1200 G-S short DSS V Repetitive reverse voltage Clamp diode 1200 DSS Gate-source voltage() 22 V V D-S short GSS Gate-source voltage() 6 G - S Voltage (t <300nsec) V D-S short 10 to 26 GSS surge surge I DC (T =60C) 204 D c 1 2 I Pulse (T =60C) 1ms * 360 Drain current * DRM c 2 3 I 540 Pulse (T =60C) 10us * * DRM c I DC (T =60C ) V =18V 204 S c GS 2 1 I Pulse (Tc=60C) 1ms V =18V* 360 A Source current * SRM GS 2 3 I 540 Pulse (Tc=60C) 10us V =18V* * SRM GS I DC (T =60C ) 204 F c 1 2 I 360 Forward current (clamp diode) * Pulse (Tc=60C) 1ms * FRM 2 3 I 540 Pulse (Tc=60C) 10us * * FRM 3 Ptot T =25C 1360 W Total power dissipation * c T 175 Max Junction Temperature jmax Operating junction temperature T 40 to150 C jop Storage temperature T 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. 4.5 Main Terminals : M6 screw Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) Please use an appropriate external gate resistor not to exceed maximum ratings of Drain - Source Voltage. (*4) T is less than 175C j Example of acceptable V waveform GS 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2017.11 - Rev.A 2/10

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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