X-On Electronics has gained recognition as a prominent supplier of BSM100GB120DN2KHOSA1 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. BSM100GB120DN2KHOSA1 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

BSM100GB120DN2KHOSA1 Infineon

Name: BSM100GB120DN2KHOSA1
Brand: Infineon
SKU: BSM100GB120DN2KHOSA1_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

BSM100GB120DN2KHOSA1 electronic component of Infineon

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See Product Specifications

Part No.	BSM100GB120DN2KHOSA1
Manufacturer:	Infineon
Category:	IGBT Modules
Description:	IGBT half-bridge; Urmax:1.2kV; Ic:100A; Ifsm:200A; AG-34MM-1
Datasheet:	BSM100GB120DN2KHOSA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 104.4059 ea
Line Total: USD 104.41

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

BSM100GB120DN2KHOSA1 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 25 Nov to Wed. 27 Nov MOQ : 1 Multiples : 1	1 : USD 104.4059

Specifications

Manufacturer Infineon Infineon
Product Category IGBT Modules IGBT Modules
Power Dissipation 700 W 700 W
Semiconductor Structure Transistor/Transistor Transistor/Transistor
Topology Igbt Half - Bridge Igbt Half - Bridge
Mounting Screw Screw
Electrical Mounting Screw Screw
Case Ag - 34Mm - 1 Ag - 34Mm - 1
Type Of Module Igbt Igbt
Max Forward Impulse Current 200 A 200 A
Max Off-State Voltage 1.2 kV 1.2 kV
Collector Current 100 A 100 A
Gate-Emitter Voltage 20 V 20 V

We are delighted to provide the BSM100GB120DN2KHOSA1 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM100GB120DN2KHOSA1 and other electronic components in the IGBT Modules category and beyond.

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Additional Infomation About Product

BSM100GB120DN2KHOSA1 is a part manufactured by Infineon. It is an insulated gate bipolar transistor (IGBT) module with a collector current of 100A, a maximum signal collector-emitter voltage of 1200V, and a maximum junction temperature of 200 degrees Celsius. This product has N-channel technology, dual encapsulated construction, soft, fast recovery, low leakage, ultrafast reverse recovery, temperature independent voltage control, and maximum power dissipation of 2400W.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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