Technische Information / Technical Information IGBT-Modul FF200R12KE4P IGBT-Module 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und bereits aufgetragenem Thermal Interface Material 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and pre-applied Thermal Interface Material Vorlufige Daten / Preliminary Data V = 1200V CES I = 200A / I = 400A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives USV-Systeme UPS systems Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Niedrige Schaltverluste Low switching losses Sehr groe Robustheit Unbeatable robustness V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive temperature coefficient Mechanische Eigenschaften Mechanical Features Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Hohe Leistungsdichte High power density Isolierte Bodenplatte Isolated base plate Standardgehuse Standard housing Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AKB date of publication: 2016-04-04 approved by: MK revision: V2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FF200R12KE4P IGBT-Module Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 85C, T = 175C I 200 A H vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 400 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 200 A, V = 15 V T = 25C 1,75 2,15 V C GE vj Collector-emitter saturation voltage I = 200 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat IC = 200 A, VGE = 15 V Tvj = 150C 2,05 V Gate-Schwellenspannung IC = 7,60 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 1,80 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 3,8 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 14,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,50 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 200 A, VCE = 600 V Tvj = 25C 0,20 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,25 s GE vj RGon = 2,7 Tvj = 150C 0,27 s Anstiegszeit, induktive Last IC = 200 A, VCE = 600 V Tvj = 25C 0,045 s t r Rise time, inductive load V = 15 V T = 125C 0,05 s GE vj RGon = 2,7 Tvj = 150C 0,055 s Abschaltverzgerungszeit, induktive Last IC = 200 A, VCE = 600 V Tvj = 25C 0,50 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,60 s GE vj RGoff = 2,7 Tvj = 150C 0,62 s Fallzeit, induktive Last IC = 200 A, VCE = 600 V Tvj = 25C 0,10 s t f Fall time, inductive load V = 15 V T = 125C 0,16 s GE vj RGoff = 2,7 Tvj = 150C 0,18 s Einschaltverlustenergie pro Puls IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25C 10,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 4000 A/s (T = 150C) T = 125C E 15,0 mJ GE vj vj on RGon = 2,7 Tvj = 150C 17,0 mJ Abschaltverlustenergie pro Puls IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25C 17,0 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 4000 V/s (T = 150C)T = 125C E 26,0 mJ GE vj vj off RGoff = 2,7 Tvj = 150C 29,0 mJ Kurzschluverhalten VGE 15 V, VCC = 800 V I SC SC data V = V -L di/dt t 10 s, T = 150C 800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 0,162 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: AKB date of publication: 2016-04-04 approved by: MK revision: V2.0 2