MWI50-12T7T IXYS

MWI 50-12T7T I = 80 A Six-Pack C25 V = 1200 V CES Trench IGBT V = 1.7 V CE(sat) typ. Part name (Marking on product) MWI 50-12T7T 15, 16 25, 26 1 5 9 17 2 6 10 23, 24 21, 22 NTC 19, 20 E72873 Pin configuration see outlines. 18 3 7 11 4 8 12 13, 14 27, 28 Features: Application: Package: Trench IGBT technology AC motor drives E2-Pac standard outline low saturation voltage Solar inverter Insulated copper base plate low switching losses Medical equipment Soldering pins for PCB mounting square RBSOA, no latch up Uninterruptible power supply Temperature sense included high short circuit capability Air-conditioning systems positive temperature coefficient Welding equipment for easy parallelling Switched-mode and MOS input, voltage controlled resonant-mode power supplies ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate IXYS reserves the right to change limits, test conditions and dimensions. 20100831d 2010 IXYS All rights reserved 1 - 7MWI 50-12T7T Output Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit collector emitter voltage V T = 25C 1200 V CES VJ max. DC gate voltage V continuous 20 V GES max. transient collector gate voltage V transient 30 V GEM collector current I T = 25C 80 A C25 C I T = 80C 50 A C80 C total power dissipation P T = 25C 270 W tot C V collector emitter saturation voltage I = 50 A V = 15 V T = 25C 1.7 2.15 V CE(sat) C GE VJ on chip level T = 125C 2.0 V VJ V gate emitter threshold voltage I = 2 mA V = V T = 25C 5 5.8 6.5 V GE(th) C GE CE VJ collector emitter leakage current I V = V V = 0 V T = 25C 2 mA CES CE CES GE VJ T = 125C 2 mA VJ gate emitter leakage current I V = 20 V 400 nA GES GE input capacitance C V = 25 V V = 0 V f = 1 MHz 3500 pF ies CE GE total gate charge Q V = 600 V V = 15 V I = 50 A 470 nC G(on) CE GE C turn-on delay time t 90 ns d(on) current rise time t inductive load T = 125C 50 ns r VJ turn-off delay time t V = 600 V I = 50 A 520 ns d(off) CE C t current fall time V = 15 V R = 18 W 90 ns f GE G turn-on energy per pulse E L = 70 nH 5 mJ on S turn-off energy per pulse E 6.5 mJ off reverse bias safe operating area RBSOA V = 15 V R = 18 W T = 125C 100 A GE G VJ V = 1150 V CEK short circuit safe operating area SCSOA t short circuit duration V = 900 V V = 15 V T = 125C 10 s SC CE GE VJ I short circuit current R = 18 W non-repetitive 200 A SC G R thermal resistance junction to case (per IGBT) 0.46 K/W thJC Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit max. repetitve reverse voltage V T = 25C 1200 V RRM VJ forward current I T = 25C 85 A F25 C I T = 80C 57 A F80 C forward voltage V I = 60 A V = 0 V T = 25C 1.95 2.2 V F F GE VJ T = 125C 1.95 V VJ reverse recovery charge Q 8 C rr V = 600 V R max. reverse recovery current I 60 A RM di /dt = -1200 A/s T = 125C F VJ t reverse recovery time 350 ns rr I = 60 A V = 0 V F GE reverse recovery energy E 2.5 mJ rec thermal resistance junction to case R (per diode) 0.6 K/W thJC T = 25C unless otherwise stated C IXYS reserves the right to change limits, test conditions and dimensions. 20100831d 2010 IXYS All rights reserved 2 - 7