X-On Electronics has gained recognition as a prominent supplier of BSM080D12P2C008 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. BSM080D12P2C008 Discrete Semiconductor Modules are a product manufactured by ROHM. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

BSM080D12P2C008 ROHM

BSM080D12P2C008 electronic component of ROHM
BSM080D12P2C008 ROHM
BSM080D12P2C008 Discrete Semiconductor Modules
BSM080D12P2C008 Semiconductors

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See Product Specifications
Part No. BSM080D12P2C008
Manufacturer: ROHM
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Half Bridge Module SiC DMOS & SBD 1200V
Datasheet: BSM080D12P2C008 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 604.6582 ea
Line Total: USD 604.66 
Availability - 8
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ: 1  Multiples: 1
Pack Size: 1

 BSM080D12P2C008 More Buying Options & Price Grid(s)

Availability Price Quantity
1
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1
Multiples : 1
1 : USD 604.6582

8
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 1
Multiples : 1
1 : USD 604.6582
2 : USD 582.9775
3 : USD 564.6213
5 : USD 548.9492

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Type
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Configuration
Operating Temperature Range
Brand
Number Of Channels
Id - Continuous Drain Current
Pd - Power Dissipation
Factory Pack Quantity :
Vds - Drain-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSM080D12P2C008 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSM080D12P2C008 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Additional Infomation About Product

10 9 8 7 6 5 SiC Power Module BSM080D12P2C008 Datasheet Application Circuit diagram Motor drive 1 Inverter, Converter 10 Photovoltaics, wind power generation. 9 8(N.C) 3,4 Induction heating equipment. 5 6 7(N.C) Features 2 *Do not connnect to NC pin. 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction This product is a half bridge module consisting of SiC-DMOS and SiC SBD from ROHM. Dimensions & Pin layout (Unit : mm) 4 1 2 3 (M2.6 FOR SELF- TAPPING www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 1/10Datasheet BSM080D12P2C008 Absolute maximum ratings (Tj = 25C) Parameter Symbol Conditions Limit Unit Drain-source voltage V 1200 G-S short DSS Gate-source voltage( ) 22 V D-S short V GSS Gate-source voltage( ) 6 G - S voltage (t <300ns) V D-S short 10 to 26 surge GSSsurge I DC(T =60C) 80 D c 1 Drain current * 2 I 160 Pulse (T =60C) 1ms* DRM c A I DC(T = 60C) V =18V 80 S c GS 1 Source current * I 160 Pulse (T =60C) 1ms V =18V SRM c GS 3 Ptot T =25C 600 W Total power disspation * c Max junction temperature T 175 jmax Junction temperature T C 40 to150 jop T Storage temperature 40 to125 stg Terminals to baseplate, Isolation voltage Visol 2500 Vrms f=60Hz AC 1min. Main Terminals : M6 screw 4.5 Mounting torque N m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (T ) is defined on the surface of base plate just under the chips. c (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T jmax. (*3) T is less than 175C j Example of acceptable VGS waveform 26V t surge 22V 0V t surge 6V 10V www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 8.Jul.2019 - Rev.001 2/10

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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