Datasheet Serial EEPROM Series Standard EEPROM WLCSP EEPROM BRCB064GWZ-3 General Description 2 BRCB064GWZ-3 is a serial EEPROM of I C BUS Interface Method Packages W(Typ) x D(Typ) x H(Max) Features 2 UCSP30L1 1.50mm x1.00mm x 0.35mm Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) Other devices than EEPROM can be connected to the same port, saving microcontroller port 1.6V to 5.5V Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of Operating Voltage, possible FAST MODE 400KHz operation Page Write Mode useful for initial value write at factory shipment Self-timed Programming Cycle Low Current Consumption Prevention of write mistake Write (write protect) Function added Prevention of write mistake at low voltage More than 1 million write cycles More than 40 years data retention Noise filter built in SCL / SDA terminal Pull-up resistor built in WP terminal Initial delivery state FFh BRCB064GWZ-3 Capacity Bit Format Type Power Source Voltage Package 64Kbit 8K8 BRCB064GWZ-3 1.6V to 5.5V UCSP30L1 Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100530-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/25 TSZ2211114001 25.Feb.2013 Rev.003Datasheet BRCB064GWZ-3 Absolute Maximum Ratings (Ta=25) Parameter Symbol Rating Unit Remark Supply Voltage V -0.3 to +6.5 V CC Power Dissipation Pd 220 (UCSP30L1) mW Derate by 2.2mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +125 Operating Temperature Topr -40 to +85 The Max value of Input Voltage/Output Voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of Input Input Voltage/ Voltage/Output Voltage is not below 1.0V. - -0.3 to Vcc+1.0 V The WP voltage over Vcc level causes unwanted current flow from Output Voltage WP to Vcc terminal because WP is pulled up to Vcc line bias resistor inside the IC. Junction Temperature Tjmax 150 Junction temperature at the storage condition Memory Cell Characteristics (Ta=25, Vcc=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (1) Write Cycles 1,000,000 - - Times (1) Data Retention 40 - - Years (1)Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage Vcc 1.6 to 5.5 V Input Voltage V 0 to Vcc IN DC Characteristics (Unless otherwise specified, Ta=-40 to +85, Vcc=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 V 0.7Vcc - Vcc+1.0 V 1.7VVcc5.5V (SCL,SDA) IH1 (2) Input Low Voltage1 V -0.3 - +0.3Vcc V 1.7VVcc5.5V IL1 Input High Voltage2 V 0.8Vcc - Vcc+1.0 V 1.6VVcc1.7V (SCL,SDA) IH2 (2) Input Low Voltage2 V -0.3 - +0.2Vcc V 1.6VVcc1.7V IL2 Input High Voltage3 V 0.7Vcc - Vcc+0.3 V 1.7VVcc5.5V (WP) IH3 Input High Voltage4 V 0.8Vcc - Vcc+0.3 V 1.6VVcc1.7V (WP) IH4 Output Low Voltage1 V - - 0.4 V I =3.0mA, 2.5VVcc5.5V (SDA) OL1 OL Output Low Voltage2 V - - 0.2 V I =0.7mA, 1.6VVcc2.5V (SDA) OL2 OL Input Leakage Current I -1 - +1 A V =0 to Vcc LI IN Output Leakage Current I -1 - +1 A V =0 to Vcc (SDA) LO OUT Pull-Up Resistor R 3 5 7 k (WP) PU Vcc=5.5V, f =400kHz, t =5ms, SCL WR Supply Current (Write) I - - 3.9 mA CC1 Byte Write, Page Write Vcc=5.5V, f =400kHz SCL Supply Current (Read) I - - 0.5 mA Random Read, current Read, Sequential Read CC2 WP=OPEN Vcc=5.5V, SDASCL=Vcc Standby Current I - - 2.0 A SB WP=OPEN, TEST=GND (2) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com TSZ02201-0R2R0G100530-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/25 TSZ2211115001 25.Feb.2013 Rev.003