X-On Electronics has gained recognition as a prominent supplier of NV25256MUW3VTBG EEPROM across the USA, India, Europe, Australia, and various other global locations. NV25256MUW3VTBG EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

NV25256MUW3VTBG ON Semiconductor

NV25256MUW3VTBG electronic component of ON Semiconductor
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Part No.NV25256MUW3VTBG
Manufacturer: ON Semiconductor
Category: EEPROM
Description: EEPROM 256KB SPI SER CMOS EEPROM
Datasheet: NV25256MUW3VTBG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.056 ea
Line Total: USD 1.06 
Availability - 2827
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2827
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.056
10 : USD 0.9339
100 : USD 0.8734
500 : USD 0.7667
1000 : USD 0.7513
3000 : USD 0.7084
6000 : USD 0.6853
9000 : USD 0.6798
24000 : USD 0.6787

   
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We are delighted to provide the NV25256MUW3VTBG from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NV25256MUW3VTBG and other electronic components in the EEPROM category and beyond.

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EEPROM Serial 256-Kb SPI Automotive Grade 1 in Wettable Flank UDFN8 Package NV25256MUW www.onsemi.com Description The NV25256 is a EEPROM Serial 256Kb SPI Automotive Grade 1 device internally organized as 32Kx8 bits. This features a 64byte page write buffer and supports the Serial Peripheral Interface 1 (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are clock input (SCK), data UDFN8 (Wettable Flank) input (SI) and data output (SO) lines. The HOLD input may be used to MUW3 SUFFIX pause any serial communication with the NV25256 device. The device CASE 517DH features software and hardware write protection, including partial as well as full array protection. OnChip ECC (Error Correction Code) makes the device suitable PIN CONFIGURATIONS for high reliability applications. V CS 1 CC Features SO HOLD Automotive AECQ100 Grade 1 (40C to +125C) Qualified WP SCK 10 MHz (5 V) SPI Compatible V SI SS 1.8 V to 5.5 V Supply Voltage Range UDFN8 (MUW3) (Top View) SPI Modes (0,0) & (1,1) 64byte Page Write Buffer Additional Identification Page with Permanent Write Protection PIN FUNCTION Selftimed Write Cycle Pin Name Function Hardware and Software Protection CS Chip Select Block Write Protection SO Serial Data Output Protect 1/4, 1/2 or Entire EEPROM Array WP Write Protect Low Power CMOS Technology V Ground SS 1,000,000 Program/Erase Cycles SI Serial Data Input 100 Year Data Retention SCK Serial Clock 8pad Wettable Flank UDFN 2x3 mm Package This Device is PbFree, Halogen Free/BFR Free, and RoHS HOLD Hold Transmission Input Compliant V Power Supply CC V CC ORDERING INFORMATION SI See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. CS NV25256MUW SO WP HOLD SCK V SS Figure 1. Functional Symbol Semiconductor Components Industries, LLC, 2020 1 Publication Order Number: July, 2020 Rev. 2 NV25256MUW/DNV25256MUW DEVICE MARKING (UDFN8) S8W AWLYW S8W= Specific Device Code A = Assembly Location WL = Wafer Lot Number YW = Assembly Start Week = PbFree Package (Note: Microdot may be in either location) Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Notes 3, 4) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D.C. OPERATING CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Read Mode) Read, SO open, f = 10 MHz 2 mA CCR SCK I Supply Current (Write Mode) Write, CS = V 2 mA CCW CC I Standby Current V = GND or V , CS = V , 3 A SB1 IN CC CC WP = V , V = 5.5 V CC CC I Standby Current V = GND or V , CS = V , 5 A SB2 IN CC CC WP = GND, V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V V = GND or V 2 2 A LO CC OUT CC V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL OL V Output High Voltage I = 1.6 mA V 0.8 V V OH OH CC www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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