CAV25256 EEPROM Serial 256-Kb SPI Automotive Grade 1 Description The CAV25256 is a EEPROM Serial 256Kb SPI Automotive Grade 1 device internally organized as 32Kx8 bits. This features a www.onsemi.com 64byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAV25256 device. The device features software and hardware write protection, including WLCSP8* SOIC8 TSSOP8 partial as well as full array protection. C8A SUFFIX V SUFFIX Y SUFFIX OnChip ECC (Error Correction Code) makes the device suitable CASE 567DG CASE 751BD CASE 948AL for high reliability applications. (*Under development. Contact Sales for availability.) Features Automotive AECQ100 Grade 1 (40C to +125C) Qualified PIN CONFIGURATIONS 10 MHz (5 V) SPI Compatible 1 CS V CC 2.5 V to 5.5 V Supply Voltage Range SO HOLD WP SCK SPI Modes (0,0) & (1,1) V SS SI 64byte Page Write Buffer SOIC (V), TSSOP (Y) Additional Identification Page with Permanent Write Protection 1 Selftimed Write Cycle V CS CC Hardware and Software Protection HOLD SO Block Write Protection WP SCK Protect 1/4, 1/2 or Entire EEPROM Array SI V SS Low Power CMOS Technology 1,000,000 Program/Erase Cycles CSP8B (X) 100 Year Data Retention (Top Views) 8lead SOIC, TSSOP and 8Ball WLCSP Packages This Device is PbFree, Halogen Free/BFR Free, and RoHS PIN FUNCTION Compliant Pin Name Function V CC CS Chip Select SO Serial Data Output SI WP Write Protect CS V Ground SS SO CAV25256 WP SI Serial Data Input HOLD SCK Serial Clock SCK HOLD Hold Transmission Input V Power Supply CC V SS Figure 1. Functional Symbol This document contains information on some products that are still under development. ORDERING INFORMATION ON Semiconductor reserves the right to change or discontinue these products without See detailed ordering and shipping information in the package notice. dimensions section on page 10 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2019 Rev. 3 CAV25256/DCAV25256 DEVICE MARKINGS (TSSOP8) (WLCSP8) (SOIC8) 25256A S56E ALYYWW AYMXXX 25256E AYMXXX 25256E = Specific Device Code A = Assembly Location S56E = Specific Device Code L = Wafer Lot A = Assembly Location YY = Year Y = Production Year (Last Digit) WW = Work Week 25256E = Specific Device Code M = Production Month (1-9, O, N, D) A = Assembly Location XXX = Last Three Digits of Assembly Lot Number Y = Production Year (Last Digit) = PbFree Package M = Production Month (1-9, O, N, D) XXX = Last Three Digits of Assembly Lot Number = PbFree Package Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Notes 3, 4) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D.C. OPERATING CHARACTERISTICS (V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Read Mode) Read, SO open, f = 10 MHz 2 mA CCR SCK I Supply Current (Write Mode) Write, CS = V 2 mA CCW CC I Standby Current V = GND or V , CS = V , 3 A SB1 IN CC CC WP = V , V = 5.5 V CC CC I Standby Current V = GND or V , CS = V , 5 A SB2 IN CC CC WP = GND, V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V V = GND or V 2 2 A LO CC OUT CC V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL OL V Output High Voltage I = 1.6 mA V 0.8 V V OH OH CC www.onsemi.com 2