X-On Electronics has gained recognition as a prominent supplier of BU99022NUX-3TR EEPROM across the USA, India, Europe, Australia, and various other global locations. BU99022NUX-3TR EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BU99022NUX-3TR ROHM

BU99022NUX-3TR electronic component of ROHM
BU99022NUX-3TR ROHM
BU99022NUX-3TR EEPROM
BU99022NUX-3TR  Semiconductors

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Part No. BU99022NUX-3TR
Manufacturer: ROHM
Category: EEPROM
Description: EEPROM I2C BUS 2-Wre 2Kx3ch VSON008X2030 EEPROM
Datasheet: BU99022NUX-3TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.3491 ea
Line Total: USD 1396.4 
Availability - 0
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
0
Ship by Mon. 03 Feb to Wed. 05 Feb
MOQ : 4000
Multiples : 4000
4000 : USD 0.3491
8000 : USD 0.3435
24000 : USD 0.3345

   
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We are delighted to provide the BU99022NUX-3TR from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BU99022NUX-3TR and other electronic components in the EEPROM category and beyond.

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Datasheet 2 I C BUS 2kbit + 2kbit 2ports serial EEPROM BU99022NUX-3 Description 2 BU99022NUX-3 series is 2kbit + 2kbit 2ports serial EEPROM of I C BUS interface method. FEATURES 2kbit + 2kbit 2ports serial EEPROM Other devices than EEPROM can be connected to the same port, saving microcontroller port 1.7V5.5V single power source action most suitable for battery use 1.7V5.5wide limit of action voltage, possible FAST MODE 400KHz action Page write mode useful for initial value write at factory shipment Auto erase and auto end function at data write Low current consumption Write mistake prevention function Write (write protect) function added (only port2 EEPROM) Write mistake prevention function at low voltage VSON008X2030 small package Data rewrite up to 1,000,000 times Data kept for 40 years Noise filter built in SCL / SDA terminal Shipment data all address FFh www.rohm.com TSZ02201-0R2R0G100010-1-2 1/23 2011 ROHM Co., Ltd. All rights reserved. 2011.12.19 Rev.001 TSZ2211114001 Datasheet BU99022NUX-3 Absolute maximum rating (Ta=25) Memory cell characteristics (Ta=25, Vcc=1.75.5V) Parameter symbol Limits Unit Parameter Unit Limits Impressed voltage V -0.3+6.5 V CC Min. Typ. Max Permissible *1 Pd 300 mW *1 Write/Erase cycle 1,000,000 cycles dissipation *1 Storage temperature range Tstg 65+150 Data retention 40 Years * 1 ction temperature range Topr 40+85 Not 100% TESTED *2 Terminal voltage 0.3Vcc+1.0 V Recommended operating condition *3 Junction Temperature Tjmax 150 Parameter Symbol Limits Unit *1 When using at Ta=25 or higher, 3.0mW to be reduced per 1. 1.75.5 Power source voltage Vcc V *2 The Max value of Terminal Voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of Terminal Voltage is not under -0.8V. 0Vcc Input voltage V IN *3 Junction temperature at the storage condition. DC operating characteristics (Unless otherwise specified, Ta=40+85VCC=1.75.5V) Specification Parameter Symbol Unit Test Condition Min. Typ. Max. Hinput V 0.7Vcc Vcc+1.0 V IH1 voltage1 Linput *1 V 0.3 0.3Vcc V IL1 voltage1 Loutput I =3.0mA, 2.5VVcc5.5V OL V 0.4 V OL1 voltage1 (SDA1,SDA2) Loutput I =0.7mA, 1.7VVcc2.5V OL V 0.2 V OL2 voltage2 (SDA1,SDA2) Input leak I 1 1 A V =0Vcc LI IN current Output leak I 1 1 A V =0Vcc (SDA1,SDA2) LO OUT current Vcc1=5.5V,f =400kHz, t =5ms, SCL WR I 2.0 CCw1 Bytewrite Pagewrite mA Vcc2=5.5V,f =400kHz, t =5ms, SCL WR I 2.0 CCw2 Bytewrite Pagewrite Operating Current Vcc1=5.5V,f =400kHz SCL I 0.5 CCr1 Random read, current read, sequential read mA Vcc2=5.5V,f =400kHz SCL I 0.5 CCr2 Random read, current read, sequential read I 2.0 Vcc1=5.5V, SDA1SCL1=Vcc SB1 Standby A current Vcc2=5.5V, SDA2SCL2=Vcc I 2.0 SB2 WP2=GND This product is not designed for protection against radio active rays. *1 When the pulse width is 50ns or less, it is -0.8V. www.rohm.com TSZ02201-0R2R0G100010-1-2 2/23 2011 ROHM Co., Ltd. All rights reserved. 2011.12.19 Rev.001 TSZ2211114001

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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